HY1908M Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HY1908M

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 185 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 90 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 42 nS

Cossⓘ - Capacitancia de salida: 389 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm

Encapsulados: TO220

 Búsqueda de reemplazo de HY1908M MOSFET

- Selecciónⓘ de transistores por parámetros

 

HY1908M datasheet

 ..1. Size:1317K  hymexa
hy1908p hy1908m hy1908b hy1908mf hy1908ps hy1908pm.pdf pdf_icon

HY1908M

HY1908P/M/B/ MF /PS/PM N-Channel Enhancement Mode MOSFET Feature Pin Description 80V/90A RDS(ON)= 7m (typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead- Free Devices Available (RoHS Compliant) TO-220FB-3L TO-220FB-3S TO-263-2L Applications Switching application Power management for inverter systems TO-220MF-3L TO-3PS-3L TO-3PM-

 8.1. Size:4518K  hymexa
hy1908d hy1908u hy1908s.pdf pdf_icon

HY1908M

HY1908D/U/S N-Channel Enhancement Mode MOSFET Features Pin Description 80V/90A, 7.8 (typ.) @ VGS=10V RDS(ON)= m Avalanche Rated Reliable and Rugged S S D D G Lead Free and Green Devices Available G (RoHS Compliant) S D G TO-251-3L TO-251-3L TO-252-2L Applications D Power Management for Inverter Systems. G N-Channel MOSFET S Ordering and Marking Informatio

 9.1. Size:1085K  1
hy1904c2.pdf pdf_icon

HY1908M

HY1904C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 40V/65A RDS(ON)= 5.1m (typ.)@VGS = 10V D D D D D D D D RDS(ON)= 6.2m (typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available S S S G G S S S Pin1 PPAK5*6-8L Applications High Frequency Point-of-Load Synchronous Buck Converter Powe

 9.2. Size:712K  1
hy1906c2.pdf pdf_icon

HY1908M

HY1906C2 Single N-Channel Enhancement Mode MOSFET Feature Pin Description 60V/70A D D D D D D D D RDS(ON)= 5.7 m (typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available S S S G G S S S Pin1 PPAK5*6-8L Applications High Frequency Point-of-Load Synchronous Buck Converter Power Tool Application Networking DC-DC Powe

Otros transistores... HY1904C2, HY1904D, HY1904U, HY1904V, HY1908D, HY1908U, HY1908S, HY1908P, IRF1010E, HY1908B, HY1908MF, HY1908PS, HY1908PM, HY1915P, HY1915B, HY1920P, HY1920B