HY1908PS Todos los transistores

 

HY1908PS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HY1908PS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 185 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 90 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 42 nS
   Cossⓘ - Capacitancia de salida: 389 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
   Paquete / Cubierta: TO3P
     - Selección de transistores por parámetros

 

HY1908PS Datasheet (PDF)

 ..1. Size:1317K  hymexa
hy1908p hy1908m hy1908b hy1908mf hy1908ps hy1908pm.pdf pdf_icon

HY1908PS

HY1908P/M/B/ MF /PS/PM N-Channel Enhancement Mode MOSFET Feature Pin Description 80V/90A RDS(ON)= 7m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead- Free Devices Available (RoHS Compliant) TO-220FB-3L TO-220FB-3S TO-263-2L Applications Switching application Power management for inverter systems TO-220MF-3L TO-3PS-3L TO-3PM-

 8.1. Size:4518K  hymexa
hy1908d hy1908u hy1908s.pdf pdf_icon

HY1908PS

HY1908D/U/SN-Channel Enhancement Mode MOSFETFeatures Pin Description 80V/90A,7.8 (typ.) @ VGS=10VRDS(ON)= m Avalanche Rated Reliable and RuggedSSDDG Lead Free and Green Devices AvailableG(RoHS Compliant)SDGTO-251-3L TO-251-3LTO-252-2LApplicationsD Power Management for Inverter Systems.G N-Channel MOSFETSOrdering and Marking Informatio

 9.1. Size:1085K  1
hy1904c2.pdf pdf_icon

HY1908PS

HY1904C2 Single N-Channel Enhancement Mode MOSFETFeature Description Pin Description 40V/65ARDS(ON)= 5.1m(typ.)@VGS = 10VD D D D D D D DRDS(ON)= 6.2m(typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableS S S G G S S SPin1 PPAK5*6-8L Applications High Frequency Point-of-Load Synchronous Buck Converter Powe

 9.2. Size:712K  1
hy1906c2.pdf pdf_icon

HY1908PS

HY1906C2 Single N-Channel Enhancement Mode MOSFETFeature Pin Description 60V/70AD D D D D D D DRDS(ON)= 5.7 m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableS S S G G S S SPin1 PPAK5*6-8L Applications High Frequency Point-of-Load Synchronous Buck Converter Power Tool Application Networking DC-DC Powe

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: AO4822A | ET6309 | CHM50N06NGP | IRF8852 | AP2312GN | SSF2307B | AM3445P

 

 
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