HY1908PS
MOSFET. Datasheet pdf. Equivalent
Type Designator: HY1908PS
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 185
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 90
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 86
nC
trⓘ - Rise Time: 42
nS
Cossⓘ -
Output Capacitance: 389
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009
Ohm
Package:
TO3P
HY1908PS
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HY1908PS
Datasheet (PDF)
..1. Size:1317K hymexa
hy1908p hy1908m hy1908b hy1908mf hy1908ps hy1908pm.pdf 
HY1908P/M/B/ MF /PS/PM N-Channel Enhancement Mode MOSFET Feature Pin Description 80V/90A RDS(ON)= 7m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead- Free Devices Available (RoHS Compliant) TO-220FB-3L TO-220FB-3S TO-263-2L Applications Switching application Power management for inverter systems TO-220MF-3L TO-3PS-3L TO-3PM-
8.1. Size:4518K hymexa
hy1908d hy1908u hy1908s.pdf
HY1908D/U/SN-Channel Enhancement Mode MOSFETFeatures Pin Description 80V/90A,7.8 (typ.) @ VGS=10VRDS(ON)= m Avalanche Rated Reliable and RuggedSSDDG Lead Free and Green Devices AvailableG(RoHS Compliant)SDGTO-251-3L TO-251-3LTO-252-2LApplicationsD Power Management for Inverter Systems.G N-Channel MOSFETSOrdering and Marking Informatio
9.1. Size:1085K 1
hy1904c2.pdf
HY1904C2 Single N-Channel Enhancement Mode MOSFETFeature Description Pin Description 40V/65ARDS(ON)= 5.1m(typ.)@VGS = 10VD D D D D D D DRDS(ON)= 6.2m(typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableS S S G G S S SPin1 PPAK5*6-8L Applications High Frequency Point-of-Load Synchronous Buck Converter Powe
9.2. Size:712K 1
hy1906c2.pdf
HY1906C2 Single N-Channel Enhancement Mode MOSFETFeature Pin Description 60V/70AD D D D D D D DRDS(ON)= 5.7 m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableS S S G G S S SPin1 PPAK5*6-8L Applications High Frequency Point-of-Load Synchronous Buck Converter Power Tool Application Networking DC-DC Powe
9.3. Size:1637K hymexa
hy1904d hy1904u hy1904v.pdf
HY1904D/U/V N-Channel Enhancement Mode MOSFET Feature Description Pin Description 40V/72A RDS(ON)= 4.8m(typ.)@VGS = 10V RDS(ON)= 5.8m(typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Power Management for Inverter Systems N-Channel MOSFET
9.4. Size:2269K hymexa
hy1906p hy1906b.pdf
HY1906P/BN-Channel Enhancement Mode MOSFETFeatures Pin Description/ , 60V 120 A6.0 (typ.) @ VGS=10VRDS(ON)= m Avalanche Rated Reliable and Rugged Lead Free and Green Devices AvailableSDG(RoHS Compliant)SDGTO-263-2LTO-263-2LTO-220FB-3LTO-220FB-3LApplicationsD Power Management for Inverter Systems.G N-Channel MOSFETSOrdering and Marking
9.5. Size:1085K hymexa
hy1904c2.pdf
HY1904C2 Single N-Channel Enhancement Mode MOSFETFeature Description Pin Description 40V/65ARDS(ON)= 5.1m(typ.)@VGS = 10VD D D D D D D DRDS(ON)= 6.2m(typ.)@VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableS S S G G S S SPin1 PPAK5*6-8L Applications High Frequency Point-of-Load Synchronous Buck Converter Powe
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