HY4008B Todos los transistores

 

HY4008B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HY4008B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 345 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 200 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 1029 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0035 Ohm
   Paquete / Cubierta: TO263
 

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HY4008B Datasheet (PDF)

 ..1. Size:4866K  hymexa
 hy4008p hy4008m hy4008b hy4008ps hy4008pm.pdf pdf_icon

HY4008B

HY4008P/M/B/PS/PMN-Channel Enhancement Mode MOSFETPin Descriptioneatures F80V/200ARDS(ON)= 2.9 m (typ.) @ VGS=10VS D S100% avalanche testedD GG SD Reliable and RuggedG TO-220FB-3L TO-220FB-3MTO-220FB-3L TO-220FB-3MTO-263-2LTO-263-2L Lead Free and Green Devices Available(RoHS Compliant)SDGSDGpplicationsATO-3PS-3L TO-3PS-3MTO-3PS-

 0.1. Size:671K  hymexa
 hy4008b6.pdf pdf_icon

HY4008B

HY4008B6N-Channel Enhancement Mode MOSFET Feature Description Pin Description 80V/255ARDS(ON)= 2.6m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Pin7 Lead Free and Green Devices Available (RoHS Compliant) Pin1 TO-263-6L Pin4 Applications Pin1 Switch application Brushless Motor Drive Pin2,3,5,6,7 N-Channel MOSFET Ordering and Marking Info

 8.1. Size:3615K  hymexa
 hy4008.pdf pdf_icon

HY4008B

HY4008W/AN-Channel Enhancement Mode MOSFETFeatures Pin Description 80V/200ARDS(ON)= 2.9 m (typ.) @ VGS=10V100% avalanche tested Reliable and Rugged Lead Free and Green Devices Available(RoHS Compliant)SSDDGGTO-247-3L TO-3P-3LApplicationsD Switching application Power Management for Inverter Systems.G N-Channel MOSFETSOrdering and Marking Infor

 8.2. Size:3615K  hymexa
 hy4008w hy4008a.pdf pdf_icon

HY4008B

HY4008W/AN-Channel Enhancement Mode MOSFETFeatures Pin Description 80V/200ARDS(ON)= 2.9 m (typ.) @ VGS=10V100% avalanche tested Reliable and Rugged Lead Free and Green Devices Available(RoHS Compliant)SSDDGGTO-247-3L TO-3P-3LApplicationsD Switching application Power Management for Inverter Systems.G N-Channel MOSFETSOrdering and Marking Infor

MOSTRAR MÁS

Otros transistores... HY3906A , HY3912W , HY3912A , HY4004P , HY4004B , HY4008B6 , HY4008P , HY4008M , 10N60 , HY4008PS , HY4008PM , HY4306B6 , HY4306P , HY4306B , HY4504B6 , HY4504P , HY4504B .

History: NCE65NF099D | CHM4311JGP | FQPF2N90 | SSM6L12TU | IRF7493PBF-1 | HFP8N65S | ELM14826AA

 

 
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