HY4504B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HY4504B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 288 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 250 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 20 nS
Cossⓘ - Capacitancia de salida: 1863 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.003 Ohm
Paquete / Cubierta: TO263
Búsqueda de reemplazo de HY4504B MOSFET
HY4504B Datasheet (PDF)
hy4504p hy4504b.pdf

HY4504P/BN-Channel Enhancement Mode MOSFETFeatures Pin Description 40V/250ARDS(ON)= 2.3 m(typ.) @ VGS=10V 100% avalanche tested Reliable and RuggedS Lead Free and Green Devices Available GD(RoHS Compliant)SGDTO-220FB-3L TO-263-2L Applications Switching Application Power Management for DC/DCN-Channel MOSFETOrdering and Marking InformationPa
hy4504b6.pdf

HY4504B6 N-Channel Enhancement Mode MOSFETFeature Pin Description 40V/322ARDS(ON)= 1.5m(typ.) @VGS = 10V 100% Avalanche Tested Reliable and Rugged Pin7 Halogen Free and Green Devices Available (RoHS Compliant) Pin1 TO-263-6L Pin4 Applications Switch application Brushless Motor Drive Pin1 DC-DC Electric Power Steering Pin2,3,5,6,7
hy4504w hy4504a.pdf

HY4504W/AN-Channel Enhancement Mode MOSFETFeatures Pin Description 40V/250A2.0 m (typ.) @ VGS=10VRDS(ON)= Avalanche Rated Reliable and Rugged Halogen Free and Green DevicesAvailable(RoHS Compliant)SSSDDDGG Applications Power Management for Inverter Systems. Ordering and Marking InformationPackage C
Otros transistores... HY4008B , HY4008PS , HY4008PM , HY4306B6 , HY4306P , HY4306B , HY4504B6 , HY4504P , IRFB4115 , HY4504W , HY4504A , HY4903P , HY4903B , HY4903B6 , HY5110W , HY5110A , HY5204W .
History: PP9H06BV | ME2320D-G



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