SSS4N90A Todos los transistores

Introduzca al menos 3 números o letras

SSS4N90A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSS4N90A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 40 W

Tensión drenaje-fuente (Vds): 900 V

Corriente continua de drenaje (Id): 2.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Conductancia de drenaje-sustrato (Cd): 730 pF

Resistencia drenaje-fuente RDS(on): 5 Ohm

Empaquetado / Estuche: TO220F

Búsqueda de reemplazo de MOSFET SSS4N90A

 

SSS4N90A Datasheet (PDF)

1.1. sss4n90a.pdf Size:496K _samsung

SSS4N90A
SSS4N90A

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 5.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 4.181 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

1.2. sss4n90as.pdf Size:852K _samsung

SSS4N90A
SSS4N90A

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 3.7 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 3.054 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

5.1. sss4n60as.pdf Size:501K _samsung

SSS4N90A
SSS4N90A

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 2.2 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 2.037 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Unit

5.2. irfs8xx irfs9xxx sss4n60 sss6n60.pdf Size:26K _samsung

SSS4N90A



5.3. sss4n80as.pdf Size:125K _samsung

SSS4N90A
SSS4N90A

SSS4N80AS Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 3.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate Charge Extended Safe Operating Area TO-220F Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 2.450 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Character

5.4. sss4n80a.pdf Size:500K _samsung

SSS4N90A
SSS4N90A

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 4.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 3.400 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

5.5. sss4n60.pdf Size:1214K _shenzhen-tuofeng-semi

SSS4N90A
SSS4N90A

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SSS4N60 Technology co.,Ltd 4 Amps 600Volts 4 Amps 600Volts 4 Amps 600Volts 4 Amps,600Volts N-CHANNEL MOSFET N-CHANNEL MOSFET N-CHANNEL MOSFET N-CHANNEL MOSFET ■ DESCRIPTION The SSS4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance

Otros transistores... SSS2N90A , SSS3N80A , SSS3N90A , SSS4N55 , SSS4N60 , SSS4N60AS , SSS4N80A , SSS4N80AS , IRF510 , SSS4N90AS , SSS5N80A , SSS5N90A , SSS6N55 , SSS6N60 , SSS6N70A , SSS6N80A , SSS6N90A .

 


SSS4N90A
  SSS4N90A
  SSS4N90A
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: IRLZ34SPBF | IRLZ34S | IRLZ34PBF | IRLZ34NSPBF | IRLZ34NPBF | IRLZ34NLPBF | IRLZ34L | IRLZ44NSPBF | IRLZ44NPBF | IRLZ44NLPBF | IRLZ44ZSPBF | IRLZ44ZPBF | IRLZ44ZLPBF | IRLZ44SPBF | IRLZ44S |

Introduzca al menos 1 números o letras