SSS4N90A PDF and Equivalents Search

 

SSS4N90A Specs and Replacement

Type Designator: SSS4N90A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 29 nS

Cossⓘ - Output Capacitance: 65 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm

Package: TO220F

SSS4N90A substitution

- MOSFET ⓘ Cross-Reference Search

 

SSS4N90A datasheet

 ..1. Size:496K  samsung
sss4n90a.pdf pdf_icon

SSS4N90A

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 5.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 900V Low RDS(ON) 4.181 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Valu... See More ⇒

 0.1. Size:852K  samsung
sss4n90as.pdf pdf_icon

SSS4N90A

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 3.7 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 900V Low RDS(ON) 3.054 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Valu... See More ⇒

 9.1. Size:888K  fairchild semi
ssp4n60b sss4n60b.pdf pdf_icon

SSS4N90A

SSP4N60B/SSS4N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.0A, 600V, RDS(on) = 2.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 22 nC) planar, DMOS technology. Low Crss ( typical 14 pF) This advanced technology has been especially tailored to Fast switchi... See More ⇒

 9.2. Size:125K  samsung
sss4n80as.pdf pdf_icon

SSS4N90A

SSS4N80AS Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate Charge Extended Safe Operating Area TO-220F Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 2.450 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol C... See More ⇒

Detailed specifications: SSS2N90A , SSS3N80A , SSS3N90A , SSS4N55 , SSS4N60 , SSS4N60AS , SSS4N80A , SSS4N80AS , P55NF06 , SSS4N90AS , SSS5N80A , SSS5N90A , SSS6N55 , SSS6N60 , SSS6N70A , SSS6N80A , SSS6N90A .

History: FQT4N25

Keywords - SSS4N90A MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 


 
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