HYG020N04NA1PL Todos los transistores

 

HYG020N04NA1PL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HYG020N04NA1PL
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 200 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 220 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 79 nS
   Cossⓘ - Capacitancia de salida: 820 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0023 Ohm
   Paquete / Cubierta: TO3P
     - Selección de transistores por parámetros

 

HYG020N04NA1PL Datasheet (PDF)

 ..1. Size:1421K  hymexa
hyg020n04na1p hyg020n04na1b hyg020n04na1pl.pdf pdf_icon

HYG020N04NA1PL

HYG020N04NA1P/B/PLN-Channel Enhancement Mode MOSFETFeature Pin Description 40V/220ARDS(ON)= 1.8 m(typ.) @VGS = 10V 100% Avalanche TestedReliable and Rugged Lead-Free and Green Devices Available(RoHS Compliant)TO-263-2LTO-220FB-3LApplications Switching application Li-battery protectionTO-3PM-3LOrdering and Marking InformationN-Channel MOSFET

 9.1. Size:793K  1
hyg023n03lr1c2.pdf pdf_icon

HYG020N04NA1PL

HYG023N03LR1C2Single N-Channel Enhancement Mode MOSFETFeature Description Pin Description 30V/125AD D D D D D D D RDS(ON)= 1.5m (typ.) @VGS = 10VRDS(ON)= 2.1m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableG S S S S S S G Pin1 PPAK5*6-8L Applications Switching Application Power Management for DC/

 9.2. Size:1497K  1
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HYG020N04NA1PL

HYG025N06LS1C2Single N-Channel Enhancement Mode MOSFETFeature Pin DescriptionD D D DD D D D 60V/170ARDS(ON)= 2.1 m (typ.) @ VGS = 10VRDS(ON)= 3.2 m (typ.) @ VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableS S S G G S S S(RoHS Compliant)Pin1PDFN8L5x6Applications High Frequency Point-of-Load Synchronous B

 9.3. Size:1254K  1
hyg025n04na1c2.pdf pdf_icon

HYG020N04NA1PL

HYG025N04NA1C2Single N-Channel Enhancement Mode MOSFETFeature Pin Description 40V/190ARDS(ON)= 1.4m(typ.) @VGS = 10VD D D DD D D D 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableG S S SS S S GPDFN8L(5x6)Applications Load Switch Lithium battery protect boardSingle N-Channel MOSFETOrdering and Marking InformationPac

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