All MOSFET. HYG020N04NA1PL Datasheet

 

HYG020N04NA1PL Datasheet and Replacement


   Type Designator: HYG020N04NA1PL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 220 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 79 nS
   Cossⓘ - Output Capacitance: 820 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0023 Ohm
   Package: TO3P
 

 HYG020N04NA1PL substitution

   - MOSFET ⓘ Cross-Reference Search

 

HYG020N04NA1PL Datasheet (PDF)

 ..1. Size:1421K  hymexa
hyg020n04na1p hyg020n04na1b hyg020n04na1pl.pdf pdf_icon

HYG020N04NA1PL

HYG020N04NA1P/B/PLN-Channel Enhancement Mode MOSFETFeature Pin Description 40V/220ARDS(ON)= 1.8 m(typ.) @VGS = 10V 100% Avalanche TestedReliable and Rugged Lead-Free and Green Devices Available(RoHS Compliant)TO-263-2LTO-220FB-3LApplications Switching application Li-battery protectionTO-3PM-3LOrdering and Marking InformationN-Channel MOSFET

 9.1. Size:793K  1
hyg023n03lr1c2.pdf pdf_icon

HYG020N04NA1PL

HYG023N03LR1C2Single N-Channel Enhancement Mode MOSFETFeature Description Pin Description 30V/125AD D D D D D D D RDS(ON)= 1.5m (typ.) @VGS = 10VRDS(ON)= 2.1m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableG S S S S S S G Pin1 PPAK5*6-8L Applications Switching Application Power Management for DC/

 9.2. Size:1497K  1
hyg025n06ls1c2.pdf pdf_icon

HYG020N04NA1PL

HYG025N06LS1C2Single N-Channel Enhancement Mode MOSFETFeature Pin DescriptionD D D DD D D D 60V/170ARDS(ON)= 2.1 m (typ.) @ VGS = 10VRDS(ON)= 3.2 m (typ.) @ VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableS S S G G S S S(RoHS Compliant)Pin1PDFN8L5x6Applications High Frequency Point-of-Load Synchronous B

 9.3. Size:1254K  1
hyg025n04na1c2.pdf pdf_icon

HYG020N04NA1PL

HYG025N04NA1C2Single N-Channel Enhancement Mode MOSFETFeature Pin Description 40V/190ARDS(ON)= 1.4m(typ.) @VGS = 10VD D D DD D D D 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableG S S SS S S GPDFN8L(5x6)Applications Load Switch Lithium battery protect boardSingle N-Channel MOSFETOrdering and Marking InformationPac

Datasheet: HY5204A , HY5208W , HY5208A , HY5608W , HY5608A , HYG018N10NS1B6 , HYG020N04NA1P , HYG020N04NA1B , AON7410 , HYG023N03LR1D , HYG023N03LR1U , HYG023N03LR1V , HYG025N06LS1C2 , HYG025N06LS1P , HYG032N03LR1C1 , HYG035N02KA1C2 , HYG035N06LS1C2 .

History: HYG023N03LR1U | 18N20

Keywords - HYG020N04NA1PL MOSFET datasheet

 HYG020N04NA1PL cross reference
 HYG020N04NA1PL equivalent finder
 HYG020N04NA1PL lookup
 HYG020N04NA1PL substitution
 HYG020N04NA1PL replacement

 

 
Back to Top

 


 
.