HYG023N03LR1D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HYG023N03LR1D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 62.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 110 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 24 nS
Cossⓘ - Capacitancia de salida: 561 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0026 Ohm
Paquete / Cubierta: TO252
- Selección de transistores por parámetros
HYG023N03LR1D Datasheet (PDF)
hyg023n03lr1d hyg023n03lr1u hyg023n03lr1v.pdf

HYG023N03LR1D/U/V N-Channel Enhancement Mode MOSFETFeature Pin Description 30V/110ARDS(ON)= 2.1m(typ.)@VGS = 10VRDS(ON)= 2.7m(typ.)@VGS = 4.5VSD SG D 100% Avalanche TestedG Reliable and Rugged SD G Halogen Free and Green Devices Available(RoHS Compliant)TO-252-2L TO-251-3L TO-251-3S Applications Switching Application Power Mana
hyg023n03lr1c2.pdf

HYG023N03LR1C2Single N-Channel Enhancement Mode MOSFETFeature Description Pin Description 30V/125AD D D D D D D D RDS(ON)= 1.5m (typ.) @VGS = 10VRDS(ON)= 2.1m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableG S S S S S S G Pin1 PPAK5*6-8L Applications Switching Application Power Management for DC/
hyg025n06ls1c2.pdf

HYG025N06LS1C2Single N-Channel Enhancement Mode MOSFETFeature Pin DescriptionD D D DD D D D 60V/170ARDS(ON)= 2.1 m (typ.) @ VGS = 10VRDS(ON)= 3.2 m (typ.) @ VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableS S S G G S S S(RoHS Compliant)Pin1PDFN8L5x6Applications High Frequency Point-of-Load Synchronous B
hyg025n04na1c2.pdf

HYG025N04NA1C2Single N-Channel Enhancement Mode MOSFETFeature Pin Description 40V/190ARDS(ON)= 1.4m(typ.) @VGS = 10VD D D DD D D D 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableG S S SS S S GPDFN8L(5x6)Applications Load Switch Lithium battery protect boardSingle N-Channel MOSFETOrdering and Marking InformationPac
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: 2SK3821K | IXFT14N80P | IPI80P03P4L-04 | SMP40N10 | 2SK0601 | IRF624A | DMC2041UFDB
History: 2SK3821K | IXFT14N80P | IPI80P03P4L-04 | SMP40N10 | 2SK0601 | IRF624A | DMC2041UFDB



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: DHF10H035R | DHF100N03B13 | DHF035N04 | DHEZ24B31 | DHESJ17N65 | DHESJ13N65 | DHESJ11N65 | DHE9Z24 | DHE90N055R | DHE90N045R | DHE85N08 | DHE8290 | DHE80N08B22 | DHE8004 | DHE50N15 | DHE50N06FZC
Popular searches
12n60 | mp42b transistor | c1675 transistor | c5198 transistor | ru7088r | 2sa733 replacement | 2n3906 transistor equivalent | 2sc4883