All MOSFET. HYG023N03LR1D Datasheet

 

HYG023N03LR1D MOSFET. Datasheet pdf. Equivalent


   Type Designator: HYG023N03LR1D
   Marking Code: G023N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 62.5 W
   Maximum Drain-Source Voltage |Vds|: 30 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
   Maximum Drain Current |Id|: 110 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 93 nC
   Rise Time (tr): 24 nS
   Drain-Source Capacitance (Cd): 561 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.0026 Ohm
   Package: TO252

 HYG023N03LR1D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HYG023N03LR1D Datasheet (PDF)

 ..1. Size:1225K  hymexa
 hyg023n03lr1d hyg023n03lr1u hyg023n03lr1v.pdf

HYG023N03LR1D HYG023N03LR1D

HYG023N03LR1D/U/V N-Channel Enhancement Mode MOSFETFeature Pin Description 30V/110ARDS(ON)= 2.1m(typ.)@VGS = 10VRDS(ON)= 2.7m(typ.)@VGS = 4.5VSD SG D 100% Avalanche TestedG Reliable and Rugged SD G Halogen Free and Green Devices Available(RoHS Compliant)TO-252-2L TO-251-3L TO-251-3S Applications Switching Application Power Mana

 2.1. Size:793K  1
 hyg023n03lr1c2.pdf

HYG023N03LR1D HYG023N03LR1D

HYG023N03LR1C2Single N-Channel Enhancement Mode MOSFETFeature Description Pin Description 30V/125AD D D D D D D D RDS(ON)= 1.5m (typ.) @VGS = 10VRDS(ON)= 2.1m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableG S S S S S S G Pin1 PPAK5*6-8L Applications Switching Application Power Management for DC/

 9.1. Size:1497K  1
 hyg025n06ls1c2.pdf

HYG023N03LR1D HYG023N03LR1D

HYG025N06LS1C2Single N-Channel Enhancement Mode MOSFETFeature Pin DescriptionD D D DD D D D 60V/170ARDS(ON)= 2.1 m (typ.) @ VGS = 10VRDS(ON)= 3.2 m (typ.) @ VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableS S S G G S S S(RoHS Compliant)Pin1PDFN8L5x6Applications High Frequency Point-of-Load Synchronous B

 9.2. Size:1254K  1
 hyg025n04na1c2.pdf

HYG023N03LR1D HYG023N03LR1D

HYG025N04NA1C2Single N-Channel Enhancement Mode MOSFETFeature Pin Description 40V/190ARDS(ON)= 1.4m(typ.) @VGS = 10VD D D DD D D D 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableG S S SS S S GPDFN8L(5x6)Applications Load Switch Lithium battery protect boardSingle N-Channel MOSFETOrdering and Marking InformationPac

 9.3. Size:1421K  hymexa
 hyg020n04na1p hyg020n04na1b hyg020n04na1pl.pdf

HYG023N03LR1D HYG023N03LR1D

HYG020N04NA1P/B/PLN-Channel Enhancement Mode MOSFETFeature Pin Description 40V/220ARDS(ON)= 1.8 m(typ.) @VGS = 10V 100% Avalanche TestedReliable and Rugged Lead-Free and Green Devices Available(RoHS Compliant)TO-263-2LTO-220FB-3LApplications Switching application Li-battery protectionTO-3PM-3LOrdering and Marking InformationN-Channel MOSFET

 9.4. Size:1447K  hymexa
 hyg025n06ls1p.pdf

HYG023N03LR1D HYG023N03LR1D

HYG025N06LS1PSingle N-Channel Enhancement Mode MOSFETFeature Pin Description 60V/160ARDS(ON)= 2.5 m (typ.) @ VGS = 10VRDS(ON)= 3.7 m (typ.) @ VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available(RoHS Compliant)TO-220FB-3LApplications High Frequency Point-of-Load Synchronous Buck Converter Power Tool Application

 9.5. Size:1497K  hymexa
 hyg025n06ls1c2.pdf

HYG023N03LR1D HYG023N03LR1D

HYG025N06LS1C2Single N-Channel Enhancement Mode MOSFETFeature Pin DescriptionD D D DD D D D 60V/170ARDS(ON)= 2.1 m (typ.) @ VGS = 10VRDS(ON)= 3.2 m (typ.) @ VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableS S S G G S S S(RoHS Compliant)Pin1PDFN8L5x6Applications High Frequency Point-of-Load Synchronous B

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 13N50 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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