HYG023N03LR1D
MOSFET. Datasheet pdf. Equivalent
Type Designator: HYG023N03LR1D
Marking Code: G023N03
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 62.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 110
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 93
nC
trⓘ - Rise Time: 24
nS
Cossⓘ -
Output Capacitance: 561
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0026
Ohm
Package:
TO252
HYG023N03LR1D
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HYG023N03LR1D
Datasheet (PDF)
..1. Size:1225K hymexa
hyg023n03lr1d hyg023n03lr1u hyg023n03lr1v.pdf 
HYG023N03LR1D/U/V N-Channel Enhancement Mode MOSFETFeature Pin Description 30V/110ARDS(ON)= 2.1m(typ.)@VGS = 10VRDS(ON)= 2.7m(typ.)@VGS = 4.5VSD SG D 100% Avalanche TestedG Reliable and Rugged SD G Halogen Free and Green Devices Available(RoHS Compliant)TO-252-2L TO-251-3L TO-251-3S Applications Switching Application Power Mana
2.1. Size:793K 1
hyg023n03lr1c2.pdf
HYG023N03LR1C2Single N-Channel Enhancement Mode MOSFETFeature Description Pin Description 30V/125AD D D D D D D D RDS(ON)= 1.5m (typ.) @VGS = 10VRDS(ON)= 2.1m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableG S S S S S S G Pin1 PPAK5*6-8L Applications Switching Application Power Management for DC/
9.1. Size:1497K 1
hyg025n06ls1c2.pdf
HYG025N06LS1C2Single N-Channel Enhancement Mode MOSFETFeature Pin DescriptionD D D DD D D D 60V/170ARDS(ON)= 2.1 m (typ.) @ VGS = 10VRDS(ON)= 3.2 m (typ.) @ VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableS S S G G S S S(RoHS Compliant)Pin1PDFN8L5x6Applications High Frequency Point-of-Load Synchronous B
9.2. Size:1254K 1
hyg025n04na1c2.pdf
HYG025N04NA1C2Single N-Channel Enhancement Mode MOSFETFeature Pin Description 40V/190ARDS(ON)= 1.4m(typ.) @VGS = 10VD D D DD D D D 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableG S S SS S S GPDFN8L(5x6)Applications Load Switch Lithium battery protect boardSingle N-Channel MOSFETOrdering and Marking InformationPac
9.3. Size:1421K hymexa
hyg020n04na1p hyg020n04na1b hyg020n04na1pl.pdf
HYG020N04NA1P/B/PLN-Channel Enhancement Mode MOSFETFeature Pin Description 40V/220ARDS(ON)= 1.8 m(typ.) @VGS = 10V 100% Avalanche TestedReliable and Rugged Lead-Free and Green Devices Available(RoHS Compliant)TO-263-2LTO-220FB-3LApplications Switching application Li-battery protectionTO-3PM-3LOrdering and Marking InformationN-Channel MOSFET
9.4. Size:1447K hymexa
hyg025n06ls1p.pdf
HYG025N06LS1PSingle N-Channel Enhancement Mode MOSFETFeature Pin Description 60V/160ARDS(ON)= 2.5 m (typ.) @ VGS = 10VRDS(ON)= 3.7 m (typ.) @ VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available(RoHS Compliant)TO-220FB-3LApplications High Frequency Point-of-Load Synchronous Buck Converter Power Tool Application
9.5. Size:1497K hymexa
hyg025n06ls1c2.pdf
HYG025N06LS1C2Single N-Channel Enhancement Mode MOSFETFeature Pin DescriptionD D D DD D D D 60V/170ARDS(ON)= 2.1 m (typ.) @ VGS = 10VRDS(ON)= 3.2 m (typ.) @ VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableS S S G G S S S(RoHS Compliant)Pin1PDFN8L5x6Applications High Frequency Point-of-Load Synchronous B
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