HYG023N03LR1U Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HYG023N03LR1U
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 62.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 110 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 24 nS
Cossⓘ - Capacitancia de salida: 561 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0026 Ohm
Encapsulados: TO251
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HYG023N03LR1U datasheet
hyg023n03lr1d hyg023n03lr1u hyg023n03lr1v.pdf
HYG023N03LR1D/U/V N-Channel Enhancement Mode MOSFET Feature Pin Description 30V/110A RDS(ON)= 2.1m (typ.)@VGS = 10V RDS(ON)= 2.7m (typ.)@VGS = 4.5V S D S G D 100% Avalanche Tested G Reliable and Rugged S D G Halogen Free and Green Devices Available (RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Switching Application Power Mana
hyg023n03lr1c2.pdf
HYG023N03LR1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 30V/125A D D D D D D D D RDS(ON)= 1.5m (typ.) @VGS = 10V RDS(ON)= 2.1m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G Pin1 PPAK5*6-8L Applications Switching Application Power Management for DC/
hyg025n06ls1c2.pdf
HYG025N06LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Pin Description D D D D D D D D 60V/170A RDS(ON)= 2.1 m (typ.) @ VGS = 10V RDS(ON)= 3.2 m (typ.) @ VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available S S S G G S S S (RoHS Compliant) Pin1 PDFN8L 5x6 Applications High Frequency Point-of-Load Synchronous B
hyg025n04na1c2.pdf
HYG025N04NA1C2 Single N-Channel Enhancement Mode MOSFET Feature Pin Description 40V/190A RDS(ON)= 1.4m (typ.) @VGS = 10V D D D D D D D D 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G PDFN8L(5x6) Applications Load Switch Lithium battery protect board Single N-Channel MOSFET Ordering and Marking Information Pac
Otros transistores... HY5208A, HY5608W, HY5608A, HYG018N10NS1B6, HYG020N04NA1P, HYG020N04NA1B, HYG020N04NA1PL, HYG023N03LR1D, K4145, HYG023N03LR1V, HYG025N06LS1C2, HYG025N06LS1P, HYG032N03LR1C1, HYG035N02KA1C2, HYG035N06LS1C2, HYG045N03LA1C2, HYG050N08NS1P
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