HYG045N03LA1C2 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HYG045N03LA1C2
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 52 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 78 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 41.6 nS
Cossⓘ - Capacitancia de salida: 270 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0043 Ohm
Encapsulados: PDFN8L
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HYG045N03LA1C2 datasheet
hyg045n03la1c2.pdf
HYG045N03LA1C2 Single N-Channel Enhancement Mode MOSFET Feature Pin Description 30V/78A D D D D D D D D RDS(ON)= 3.6 m (typ.) @VGS = 10V RDS(ON)= 4.8 m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G PDFN8L(5x6) Applications Load Switch Lithium battery protect board Single N-Channel MOSFET O
hyg045n03la1c2.pdf
HYG045N03LA1C2 Single N-Channel Enhancement Mode MOSFET Feature Pin Description 30V/78A D D D D D D D D RDS(ON)= 3.6 m (typ.) @VGS = 10V RDS(ON)= 4.8 m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G PDFN8L(5x6) Applications Load Switch Lithium battery protect board Single N-Channel MOSFET O
hyg045n03la1c1.pdf
HYG045N03LA1C1 N-Channel Enhancement Mode MOSFET Feature Pin Description 30V/50A RDS(ON)=3.9 m (typ.) @VGS = 10V RDS(ON)=5.2 m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen Free and Green Devices Available Pin1 (RoHS Compliant) Applications Switching Application Battery Protection Single N-Channel MOSFET Ordering and Marking Info
hyg042n10ns1p hyg042n10ns1b.pdf
HYG042N10NS1P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 100V/160A RDS(ON)=3.5m (typ.) @ VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available (RoHS Compliant) TO-220FB-3L TO-263-2L Applications Power Switching application DC-DC Converters N-Channel MOSFET Ordering and Marking Information
Otros transistores... HYG023N03LR1D, HYG023N03LR1U, HYG023N03LR1V, HYG025N06LS1C2, HYG025N06LS1P, HYG032N03LR1C1, HYG035N02KA1C2, HYG035N06LS1C2, AON6380, HYG050N08NS1P, HYG050N08NS1B, HYG050N13NS1B6, HYG060N08NS1D, HYG060N08NS1U, HYG060N08NS1V, HYG060N08NS1P, HYG060N08NS1B
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