HYG045N03LA1C2 Todos los transistores

 

HYG045N03LA1C2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HYG045N03LA1C2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 52 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 78 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 41.6 nS
   Cossⓘ - Capacitancia de salida: 270 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0043 Ohm
   Paquete / Cubierta: PDFN8L
 
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HYG045N03LA1C2 Datasheet (PDF)

 ..1. Size:1346K  1
 hyg045n03la1c2.pdf pdf_icon

HYG045N03LA1C2

HYG045N03LA1C2Single N-Channel Enhancement Mode MOSFETFeature Pin Description 30V/78AD D D DD D D DRDS(ON)= 3.6 m(typ.) @VGS = 10VRDS(ON)= 4.8 m(typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableG S S SS S S GPDFN8L(5x6)Applications Load Switch Lithium battery protect boardSingle N-Channel MOSFETO

 ..2. Size:1346K  hymexa
 hyg045n03la1c2.pdf pdf_icon

HYG045N03LA1C2

HYG045N03LA1C2Single N-Channel Enhancement Mode MOSFETFeature Pin Description 30V/78AD D D DD D D DRDS(ON)= 3.6 m(typ.) @VGS = 10VRDS(ON)= 4.8 m(typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableG S S SS S S GPDFN8L(5x6)Applications Load Switch Lithium battery protect boardSingle N-Channel MOSFETO

 1.1. Size:1340K  1
 hyg045n03la1c1.pdf pdf_icon

HYG045N03LA1C2

HYG045N03LA1C1N-Channel Enhancement Mode MOSFETFeature Pin Description 30V/50ARDS(ON)=3.9 m (typ.) @VGS = 10VRDS(ON)=5.2 m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen Free and Green Devices AvailablePin1(RoHS Compliant)Applications Switching Application Battery ProtectionSingle N-Channel MOSFETOrdering and Marking Info

 9.1. Size:863K  1
 hyg042n10ns1p hyg042n10ns1b.pdf pdf_icon

HYG045N03LA1C2

HYG042N10NS1P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 100V/160A RDS(ON)=3.5m(typ.) @ VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available (RoHS Compliant) TO-220FB-3L TO-263-2L Applications Power Switching application DC-DC Converters N-Channel MOSFET Ordering and Marking Information

MOSTRAR MÁS

Otros transistores... HYG023N03LR1D , HYG023N03LR1U , HYG023N03LR1V , HYG025N06LS1C2 , HYG025N06LS1P , HYG032N03LR1C1 , HYG035N02KA1C2 , HYG035N06LS1C2 , IRLZ44N , HYG050N08NS1P , HYG050N08NS1B , HYG050N13NS1B6 , HYG060N08NS1D , HYG060N08NS1U , HYG060N08NS1V , HYG060N08NS1P , HYG060N08NS1B .

History: APTC60DAM24CT1G | 2SK436

 

 
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