HYG050N08NS1P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

HYG050N08NS1P Datasheet (PDF)

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HYG050N08NS1P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 80V/130A RDS(ON)= 4 m(typ.)@VGS = 10V 100% Avalanche Tested S Reliable and Rugged DGLead-Free and Green Devices Available S DG(RoHS Compliant) TO-220FB-3L TO-263-2LApplications Switching application Power management for inverter systems Motor control N-Chan

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HYG050N13NS1B6N-Channel Enhancement Mode MOSFETFeature Pin Description 135V/200ARDS(ON)=3.8m(typ.) @ VGS = 10V 100% Avalanche Tested Reliable and RuggedPin7 Lead-Free and Green Devices Available(RoHS Compliant)Pin1TO-263-6LPin4Applications Power Switching application Uninterruptible Power SupplyPin1Pin2,3,5,6,7Ordering and Marking Informat

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HYG055N08NS1C2 N-Channel Enhancement Mode MOSFET Feature Pin Description 80V/85A D D D D D D D DRDS(ON)=4.8 m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Halogen-Free Devices Available (RoHS Compliant) S S S G G S S SPin1 PPAK5*6 8L-Applications Switching application Power management for inverter systems Motor contr

9.2. Size:901K 1
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HYG055N08NS1P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 80V/120A RDS(ON)=5.3 m(typ.)@VGS = 10V 100% Avalanche Tested S Reliable and Rugged DGLead-Free and Green Devices Available S DG(RoHS Compliant) TO-220FB-3L TO-263-2LApplications Switching application Power management for inverter systems Motor control N

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