All MOSFET. HYG050N08NS1P Datasheet

 

HYG050N08NS1P MOSFET. Datasheet pdf. Equivalent


   Type Designator: HYG050N08NS1P
   Marking Code: G050N08
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 187.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 130 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 68 nC
   trⓘ - Rise Time: 87 nS
   Cossⓘ - Output Capacitance: 1770 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: TO220

 HYG050N08NS1P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HYG050N08NS1P Datasheet (PDF)

 ..1. Size:822K  hymexa
 hyg050n08ns1p hyg050n08ns1b.pdf

HYG050N08NS1P HYG050N08NS1P

HYG050N08NS1P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 80V/130A RDS(ON)= 4 m(typ.)@VGS = 10V 100% Avalanche Tested S Reliable and Rugged DGLead-Free and Green Devices Available S DG(RoHS Compliant) TO-220FB-3L TO-263-2LApplications Switching application Power management for inverter systems Motor control N-Chan

 7.1. Size:1441K  hymexa
 hyg050n13ns1b6.pdf

HYG050N08NS1P HYG050N08NS1P

HYG050N13NS1B6N-Channel Enhancement Mode MOSFETFeature Pin Description 135V/200ARDS(ON)=3.8m(typ.) @ VGS = 10V 100% Avalanche Tested Reliable and RuggedPin7 Lead-Free and Green Devices Available(RoHS Compliant)Pin1TO-263-6LPin4Applications Power Switching application Uninterruptible Power SupplyPin1Pin2,3,5,6,7Ordering and Marking Informat

 9.1. Size:746K  1
 hyg055n08ns1c2.pdf

HYG050N08NS1P HYG050N08NS1P

HYG055N08NS1C2 N-Channel Enhancement Mode MOSFET Feature Pin Description 80V/85A D D D D D D D DRDS(ON)=4.8 m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Halogen-Free Devices Available (RoHS Compliant) S S S G G S S SPin1 PPAK5*6 8L-Applications Switching application Power management for inverter systems Motor contr

 9.2. Size:901K  1
 hyg055n08ns1p hyg055n08ns1b.pdf

HYG050N08NS1P HYG050N08NS1P

HYG055N08NS1P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 80V/120A RDS(ON)=5.3 m(typ.)@VGS = 10V 100% Avalanche Tested S Reliable and Rugged DGLead-Free and Green Devices Available S DG(RoHS Compliant) TO-220FB-3L TO-263-2LApplications Switching application Power management for inverter systems Motor control N

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