HYG065N15NS1B Todos los transistores

 

HYG065N15NS1B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HYG065N15NS1B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 375 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 165 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 116.6 nS
   Cossⓘ - Capacitancia de salida: 888 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0075 Ohm
   Paquete / Cubierta: TO263

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HYG065N15NS1B Datasheet (PDF)

 ..1. Size:1408K  hymexa
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HYG065N15NS1B
HYG065N15NS1B

HYG065N15NS1P/BN-Channel Enhancement Mode MOSFETFeature Pin Description 150V/165ARDS(ON)=6.2m(typ.) @ VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available(RoHS Compliant)TO-220FB-3L TO-263-2LApplications Power Switching application Uninterruptible Power SupplyN-Channel MOSFETOrdering and Marking InformationPa

 0.1. Size:1465K  hymexa
hyg065n15ns1b6.pdf

HYG065N15NS1B
HYG065N15NS1B

HYG065N15NS1B6N-Channel Enhancement Mode MOSFETFeature Pin Description 150V/165ARDS(ON)=6.0m(typ.) @ VGS = 10V 100% Avalanche Tested Reliable and RuggedPin7 Lead-Free and Green Devices Available(RoHS Compliant)Pin1TO-263-6LPin4Applications Power Switching application Uninterruptible Power SupplyPin1Pin2,3,5,6,7Ordering and Marking Informat

 7.1. Size:709K  hymexa
hyg065n07ns1p hyg065n07ns1b.pdf

HYG065N15NS1B
HYG065N15NS1B

HYG065N07NS1P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 70V/100A RDS(ON)=5.5 m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Lead-Free and Green Devices Available (RoHS Compliant) TO-220FB-3L TO-263-2LApplications Switching application Power management for inverter systems Motor control N-Channel MOSFET

 7.2. Size:744K  hymexa
hyg065n07ns1d hyg065n07ns1u hyg065n07ns1v.pdf

HYG065N15NS1B
HYG065N15NS1B

HYG065N07NS1D/U/V N-Channel Enhancement Mode MOSFET Feature Pin Description 70V/70A RDS(ON)= 6m(typ.)@VGS = 10V 100% Avalanche Tested SD Reliable and Rugged SSGDDGG Halogen Free and Green Devices Available SDG(RoHS Compliant) TO-252-2L TO-251-3L TO-251-3SApplications Switching application Power Management for Inverter Syste

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