HSBA0139 Todos los transistores

 

HSBA0139 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HSBA0139
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 83 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 92 nC
   trⓘ - Tiempo de subida: 32.2 nS
   Cossⓘ - Capacitancia de salida: 223 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
   Paquete / Cubierta: PRPAK5X6
 

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HSBA0139 Datasheet (PDF)

 ..1. Size:819K  1
 hsba0139.pdf pdf_icon

HSBA0139

HSBA0139 P-Ch 100V Fast Switching MOSFETs Description Product Summary The HSBA0139 uses advanced trench MOSFET VDS -100 V technology to provide excellent RDS(ON) and gate RDS(ON),typ 42 m charge for use in a wide variety of other applications. ID -30 A The HSBA0139 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.

 ..2. Size:819K  huashuo
 hsba0139.pdf pdf_icon

HSBA0139

HSBA0139 P-Ch 100V Fast Switching MOSFETs Description Product Summary The HSBA0139 uses advanced trench MOSFET VDS -100 V technology to provide excellent RDS(ON) and gate RDS(ON),typ 42 m charge for use in a wide variety of other applications. ID -30 A The HSBA0139 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.

 9.1. Size:1090K  1
 hsba060n10.pdf pdf_icon

HSBA0139

HSBA060N10 N-Ch 100V Fast Switching MOSFETs Product Summary Description The HSBA060N10 is the high cell density trenched VDS 100 V N-ch MOSFETs, which provide excellent RDSON RDS(ON),TYP 4.6 m and gate charge for most of the Synchronous Rectification for AC/DC Quick Charger. ID 86 A PRPAK5X6 Pin Configuration 100% EAS Guaranteed Low RDS(ON) Low Gate Charg

 9.2. Size:536K  1
 hsba0048.pdf pdf_icon

HSBA0139

HSBA0048 N-Ch 100V Fast Switching MOSFETs Product Summary Description The HSBA0048 is the high cell density trenched N- V 100 V DSch MOSFETs, which provide excellent RDSON and R 6.6 m DS(ON),TYPgate charge for most of the Synchronous Rectification for AC/DC Quick Charger. I 78 A DPRPAK5X6 Pin Configuration 100% EAS Guaranteed Low R DS(ON) Low Gate

MOSTRAR MÁS

Otros transistores... HYG800P10LR1D , HYG800P10LR1U , HYG800P10LR1V , HSD4N65 , HSU4N65 , HSP4N65 , HSF4N65 , HSBA0048 , MMD60R360PRH , HSBA060N10 , HSBA100P03 , HSBA15810C , HSBA20N15S , HSBA3004 , HSBA3014 , HSBA3031 , HSBA3048 .

 

 
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