All MOSFET. HSBA0139 Datasheet

 

HSBA0139 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HSBA0139
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 92 nC
   trⓘ - Rise Time: 32.2 nS
   Cossⓘ - Output Capacitance: 223 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: PRPAK5X6

 HSBA0139 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HSBA0139 Datasheet (PDF)

 ..1. Size:819K  1
 hsba0139.pdf

HSBA0139 HSBA0139

HSBA0139 P-Ch 100V Fast Switching MOSFETs Description Product Summary The HSBA0139 uses advanced trench MOSFET VDS -100 V technology to provide excellent RDS(ON) and gate RDS(ON),typ 42 m charge for use in a wide variety of other applications. ID -30 A The HSBA0139 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.

 ..2. Size:819K  huashuo
 hsba0139.pdf

HSBA0139 HSBA0139

HSBA0139 P-Ch 100V Fast Switching MOSFETs Description Product Summary The HSBA0139 uses advanced trench MOSFET VDS -100 V technology to provide excellent RDS(ON) and gate RDS(ON),typ 42 m charge for use in a wide variety of other applications. ID -30 A The HSBA0139 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.

 9.1. Size:1090K  1
 hsba060n10.pdf

HSBA0139 HSBA0139

HSBA060N10 N-Ch 100V Fast Switching MOSFETs Product Summary Description The HSBA060N10 is the high cell density trenched VDS 100 V N-ch MOSFETs, which provide excellent RDSON RDS(ON),TYP 4.6 m and gate charge for most of the Synchronous Rectification for AC/DC Quick Charger. ID 86 A PRPAK5X6 Pin Configuration 100% EAS Guaranteed Low RDS(ON) Low Gate Charg

 9.2. Size:536K  1
 hsba0048.pdf

HSBA0139 HSBA0139

HSBA0048 N-Ch 100V Fast Switching MOSFETs Product Summary Description The HSBA0048 is the high cell density trenched N- V 100 V DSch MOSFETs, which provide excellent RDSON and R 6.6 m DS(ON),TYPgate charge for most of the Synchronous Rectification for AC/DC Quick Charger. I 78 A DPRPAK5X6 Pin Configuration 100% EAS Guaranteed Low R DS(ON) Low Gate

 9.3. Size:1090K  huashuo
 hsba060n10.pdf

HSBA0139 HSBA0139

HSBA060N10 N-Ch 100V Fast Switching MOSFETs Product Summary Description The HSBA060N10 is the high cell density trenched VDS 100 V N-ch MOSFETs, which provide excellent RDSON RDS(ON),TYP 4.6 m and gate charge for most of the Synchronous Rectification for AC/DC Quick Charger. ID 86 A PRPAK5X6 Pin Configuration 100% EAS Guaranteed Low RDS(ON) Low Gate Charg

 9.4. Size:755K  huashuo
 hsba0048.pdf

HSBA0139 HSBA0139

HSBA0048 N-Ch 100V Fast Switching MOSFETs Product Summary Description The HSBA0048 is the high cell density trenched N- V 100 V DSch MOSFETs, which provide excellent RDSON and R 6.6 m DS(ON),TYPgate charge for most of the Synchronous Rectification for AC/DC Quick Charger. I 48 A DPRPAK5X6 Pin Configuration 100% EAS Guaranteed Low R DS(ON) Low Gate

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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