HSBA15810C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HSBA15810C
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 208 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 72 nC
trⓘ - Tiempo de subida: 18 nS
Cossⓘ - Capacitancia de salida: 609 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm
Paquete / Cubierta: PRPAK5X6
Búsqueda de reemplazo de MOSFET HSBA15810C
HSBA15810C Datasheet (PDF)
hsba15810c.pdf
HSBA15810C N-Ch 100V Fast Switching MOSFETs Product Summary General Description VDS 100 V 100% EAS Guaranteed Green Device Available RDS(ON),typ 3.7 m Super Low RDS(ON) Advanced high cell density Trench ID 100 A technology PRPAK5*6 Pin Configuration Applications MOTOR Driver. BMS. High frequency switching and synchronous rectifica
hsba15810c.pdf
HSBA15810C N-Ch 100V Fast Switching MOSFETs Product Summary General Description VDS 100 V 100% EAS Guaranteed Green Device Available RDS(ON),typ 3.7 m Super Low RDS(ON) Advanced high cell density Trench ID 100 A technology PRPAK5*6 Pin Configuration Applications MOTOR Driver. BMS. High frequency switching and synchronous rectifica
hsba100p03.pdf
HSBA100P03 P-Ch 30V Fast Switching MOSFETs Description Product Summary VDS -30 V The HSBA100P03 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON RDS(ON),typ 2.6 m and gate charge for most of the synchronous buck converter applications. ID -100 A The HSBA100P03 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full func
hsba100p03.pdf
HSBA100P03 P-Ch 30V Fast Switching MOSFETs Description Product Summary VDS -30 V The HSBA100P03 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON RDS(ON),typ 2.6 m and gate charge for most of the synchronous buck converter applications. ID -100 A The HSBA100P03 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full func
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918