HSBA3048 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HSBA3048

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 63 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 100 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6.2 nS

Cossⓘ - Capacitancia de salida: 1916 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0016 Ohm

Encapsulados: PRPAK5X6

 Búsqueda de reemplazo de HSBA3048 MOSFET

- Selecciónⓘ de transistores por parámetros

 

HSBA3048 datasheet

 ..1. Size:945K  1
hsba3048.pdf pdf_icon

HSBA3048

HSBA3048 N-Ch 30V Fast Switching MOSFETs General Description Product Summary VDS 30 V 100% UIS Tested Advanced Trench Technology RDS(ON),typ 1.3 m Low Gate Charge High Current Capability ID 100 A RoHS and Halogen-Free Compliant Applications PRPAK5X6 Pin Configuration Power Management in Desktop Computer DC/DC Converters Absolute Maxi

 ..2. Size:945K  huashuo
hsba3048.pdf pdf_icon

HSBA3048

HSBA3048 N-Ch 30V Fast Switching MOSFETs General Description Product Summary VDS 30 V 100% UIS Tested Advanced Trench Technology RDS(ON),typ 1.3 m Low Gate Charge High Current Capability ID 100 A RoHS and Halogen-Free Compliant Applications PRPAK5X6 Pin Configuration Power Management in Desktop Computer DC/DC Converters Absolute Maxi

 8.1. Size:698K  1
hsba3050.pdf pdf_icon

HSBA3048

HSBA3050 N-Ch 30V Fast Switching MOSFETs Product Summary Applications Power Management in Desktop Computer or VDS 30 V DC/DC Converters RDS(ON),typ 3 m Isolated DC/DC Converters in Telecom and Industrial. ID 75 A Features 100% EAS Guaranteed Green Device Available PRPAK5*6 Pin Configuration Super Low Gate Charge Excellent CdV/dt effect

 8.2. Size:395K  1
hsba3014.pdf pdf_icon

HSBA3048

HSBA3014 N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSBA3014 is the high cell density trenched VDS 30 V N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the RDS(ON),max 12 m synchronous buck converter applications. ID 50 A The HSBA3014 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli

Otros transistores... HSBA0139, HSBA060N10, HSBA100P03, HSBA15810C, HSBA20N15S, HSBA3004, HSBA3014, HSBA3031, IRFZ44N, HSBA3050, HSBA3052, HSBA3054, HSBA3056, HSBA3058, HSBA3060, HSBA3062, HSBA3094