HSBA3048 Todos los transistores

 

HSBA3048 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HSBA3048
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 63 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6.2 nS
   Cossⓘ - Capacitancia de salida: 1916 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0016 Ohm
   Paquete / Cubierta: PRPAK5X6
     - Selección de transistores por parámetros

 

HSBA3048 Datasheet (PDF)

 ..1. Size:945K  1
hsba3048.pdf pdf_icon

HSBA3048

HSBA3048 N-Ch 30V Fast Switching MOSFETs General Description Product Summary VDS 30 V 100% UIS Tested Advanced Trench Technology RDS(ON),typ 1.3 m Low Gate Charge High Current Capability ID 100 A RoHS and Halogen-Free Compliant Applications PRPAK5X6 Pin Configuration Power Management in Desktop Computer DC/DC Converters Absolute Maxi

 ..2. Size:945K  huashuo
hsba3048.pdf pdf_icon

HSBA3048

HSBA3048 N-Ch 30V Fast Switching MOSFETs General Description Product Summary VDS 30 V 100% UIS Tested Advanced Trench Technology RDS(ON),typ 1.3 m Low Gate Charge High Current Capability ID 100 A RoHS and Halogen-Free Compliant Applications PRPAK5X6 Pin Configuration Power Management in Desktop Computer DC/DC Converters Absolute Maxi

 8.1. Size:698K  1
hsba3050.pdf pdf_icon

HSBA3048

HSBA3050 N-Ch 30V Fast Switching MOSFETs Product Summary Applications Power Management in Desktop Computer or VDS 30 V DC/DC Converters RDS(ON),typ 3 m Isolated DC/DC Converters in Telecom and Industrial. ID 75 A Features 100% EAS Guaranteed Green Device Available PRPAK5*6 Pin Configuration Super Low Gate Charge Excellent CdV/dt effect

 8.2. Size:395K  1
hsba3014.pdf pdf_icon

HSBA3048

HSBA3014 N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSBA3014 is the high cell density trenched VDS 30 V N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the RDS(ON),max 12 m synchronous buck converter applications. ID 50 A The HSBA3014 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli

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History: LNH4N60 | 2SK1542

 

 
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