HSBA6048 Todos los transistores

 

HSBA6048 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HSBA6048
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 83 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 85 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 1522 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0036 Ohm
   Paquete / Cubierta: PRPAK5X6
 

 Búsqueda de reemplazo de HSBA6048 MOSFET

   - Selección ⓘ de transistores por parámetros

 

HSBA6048 Datasheet (PDF)

 ..1. Size:637K  1
hsba6048.pdf pdf_icon

HSBA6048

HSBA6048 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSBA6048 is the high cell density trenched N-V 60 V DSch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 3.6 m DS(ON),maxconverter applications. I 85 A DThe HSBA6048 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function re

 ..2. Size:637K  huashuo
hsba6048.pdf pdf_icon

HSBA6048

HSBA6048 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSBA6048 is the high cell density trenched N-V 60 V DSch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 3.6 m DS(ON),maxconverter applications. I 85 A DThe HSBA6048 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function re

 7.1. Size:497K  1
hsba6040.pdf pdf_icon

HSBA6048

HSBA6040 Description Product Summary The HSBA6040 is the high cell density trenched N-VDS 60 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 5.2 m gate charge for most of the synchronous buck converter applications. ID 116 A The HSBA6040 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. l Super Low Gat

 7.2. Size:497K  huashuo
hsba6040.pdf pdf_icon

HSBA6048

HSBA6040 Description Product Summary The HSBA6040 is the high cell density trenched N-VDS 60 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 5.2 m gate charge for most of the synchronous buck converter applications. ID 116 A The HSBA6040 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. l Super Low Gat

Otros transistores... HSBA4006 , HSBA4016 , HSBA4048 , HSBA4052 , HSBA4094 , HSBA6016 , HSBA6032 , HSBA6040 , P55NF06 , HSBA6066 , HSBA8024A , HSBA8048 , HSBA8066 , HSBB0012 , HSBB02P15 , HSBB2627 , HSBB3002 .

History: FDB2552F085

 

 
Back to Top

 


 
.