HSBA8048 Todos los transistores

 

HSBA8048 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HSBA8048
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 56 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 48 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 4.2 nS
   Cossⓘ - Capacitancia de salida: 410 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0065 Ohm
   Paquete / Cubierta: PRPAK5X6

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HSBA8048 Datasheet (PDF)

 ..1. Size:636K  1
hsba8048.pdf

HSBA8048
HSBA8048

HSBA8048 N-Ch 80V Fast Switching MOSFETs Description Product Summary V The HSBA8048 is the high cell density trenched N- DS 80 V ch MOSFETs, which provide excellent RDSON and R 4.3 m DS(ON),TYPgate charge for most of the synchronous rectification applications. I 48 A DThe HSBA8048 meet the RoHS and Halogen-Free compliant product requirement, 100% EAS guaranteed w

 ..2. Size:636K  huashuo
hsba8048.pdf

HSBA8048
HSBA8048

HSBA8048 N-Ch 80V Fast Switching MOSFETs Description Product Summary V The HSBA8048 is the high cell density trenched N- DS 80 V ch MOSFETs, which provide excellent RDSON and R 4.3 m DS(ON),TYPgate charge for most of the synchronous rectification applications. I 48 A DThe HSBA8048 meet the RoHS and Halogen-Free compliant product requirement, 100% EAS guaranteed w

 8.1. Size:711K  1
hsba8066.pdf

HSBA8048
HSBA8048

HSBA8066 N-Ch 80V Fast Switching MOSFETs Applications Product Summary VDS 80 V High Frequency Switching and Synchronous Rectification. RDS(ON),TYP 7.2 m DC/DC Converter. Motor Drivers. ID 60 A Features PRPAK5X6 Pin Configuration 100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Ad

 8.2. Size:949K  huashuo
hsba8024a.pdf

HSBA8048
HSBA8048

HSBA8024A N-Ch 80V Fast Switching MOSFETs Description Product Summary V The HSBA8024A is the high cell density trenched DS 80 V N-ch MOSFETs, which provide excellent RDSON R 6.5 m DS(ON),MAXand gate charge for most of the synchronous rectification applications. I 122 A DThe HSBA8024A meet the RoHS and Halogen-Free compliant product requirement, 100% EAS guarantee

 8.3. Size:711K  huashuo
hsba8066.pdf

HSBA8048
HSBA8048

HSBA8066 N-Ch 80V Fast Switching MOSFETs Applications Product Summary VDS 80 V High Frequency Switching and Synchronous Rectification. RDS(ON),TYP 7.2 m DC/DC Converter. Motor Drivers. ID 60 A Features PRPAK5X6 Pin Configuration 100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Ad

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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