HSBA8048 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HSBA8048

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 56 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 48 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4.2 nS

Cossⓘ - Capacitancia de salida: 410 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0065 Ohm

Encapsulados: PRPAK5X6

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HSBA8048 datasheet

 ..1. Size:636K  1
hsba8048.pdf pdf_icon

HSBA8048

HSBA8048 N-Ch 80V Fast Switching MOSFETs Description Product Summary V The HSBA8048 is the high cell density trenched N- DS 80 V ch MOSFETs, which provide excellent RDSON and R 4.3 m DS(ON),TYP gate charge for most of the synchronous rectification applications. I 48 A D The HSBA8048 meet the RoHS and Halogen-Free compliant product requirement, 100% EAS guaranteed w

 ..2. Size:636K  huashuo
hsba8048.pdf pdf_icon

HSBA8048

HSBA8048 N-Ch 80V Fast Switching MOSFETs Description Product Summary V The HSBA8048 is the high cell density trenched N- DS 80 V ch MOSFETs, which provide excellent RDSON and R 4.3 m DS(ON),TYP gate charge for most of the synchronous rectification applications. I 48 A D The HSBA8048 meet the RoHS and Halogen-Free compliant product requirement, 100% EAS guaranteed w

 8.1. Size:711K  1
hsba8066.pdf pdf_icon

HSBA8048

HSBA8066 N-Ch 80V Fast Switching MOSFETs Applications Product Summary VDS 80 V High Frequency Switching and Synchronous Rectification. RDS(ON),TYP 7.2 m DC/DC Converter. Motor Drivers. ID 60 A Features PRPAK5X6 Pin Configuration 100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Ad

 8.2. Size:949K  huashuo
hsba8024a.pdf pdf_icon

HSBA8048

HSBA8024A N-Ch 80V Fast Switching MOSFETs Description Product Summary V The HSBA8024A is the high cell density trenched DS 80 V N-ch MOSFETs, which provide excellent RDSON R 6.5 m DS(ON),MAX and gate charge for most of the synchronous rectification applications. I 122 A D The HSBA8024A meet the RoHS and Halogen- Free compliant product requirement, 100% EAS guarantee

Otros transistores... HSBA4052, HSBA4094, HSBA6016, HSBA6032, HSBA6040, HSBA6048, HSBA6066, HSBA8024A, IRFB4115, HSBA8066, HSBB0012, HSBB02P15, HSBB2627, HSBB3002, HSBB3004, HSBB3016, HSBB3052