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HSBB0012 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HSBB0012
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 21 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 3 nS
   Cossⓘ - Capacitancia de salida: 20 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.105 Ohm
   Paquete / Cubierta: PRPAK3X3
 

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HSBB0012 Datasheet (PDF)

 ..1. Size:525K  1
hsbb0012.pdf pdf_icon

HSBB0012

HSBB0012 N-Ch 100V Fast Switching MOSFETs Description Product Summary VDS 100 V The HSBB0012 is new generation MOSFET features low on-resistance and fast switching. RDS(ON),TYP 93 m Making it ideal for high efficiency power management applications. ID 20 A The HSBB0012 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability appro

 ..2. Size:525K  huashuo
hsbb0012.pdf pdf_icon

HSBB0012

HSBB0012 N-Ch 100V Fast Switching MOSFETs Description Product Summary VDS 100 V The HSBB0012 is new generation MOSFET features low on-resistance and fast switching. RDS(ON),TYP 93 m Making it ideal for high efficiency power management applications. ID 20 A The HSBB0012 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability appro

 9.1. Size:835K  1
hsbb02p15.pdf pdf_icon

HSBB0012

HSBB02P15 P-Ch 150V Fast Switching MOSFETs Description Product Summary The HSBB02P15 is the high cell density trenched V -150 V DSP-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 780 m DS(ON),Maxconverter applications. I -2 A DThe HSBB02P15 meet the RoHS and Green Product requirement. 100% EAS Guaranteed PRP

 9.2. Size:835K  huashuo
hsbb02p15.pdf pdf_icon

HSBB0012

HSBB02P15 P-Ch 150V Fast Switching MOSFETs Description Product Summary The HSBB02P15 is the high cell density trenched V -150 V DSP-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 780 m DS(ON),Maxconverter applications. I -2 A DThe HSBB02P15 meet the RoHS and Green Product requirement. 100% EAS Guaranteed PRP

Otros transistores... HSBA6016 , HSBA6032 , HSBA6040 , HSBA6048 , HSBA6066 , HSBA8024A , HSBA8048 , HSBA8066 , IRFB4115 , HSBB02P15 , HSBB2627 , HSBB3002 , HSBB3004 , HSBB3016 , HSBB3052 , HSBB3054 , HSBB3056 .

History: IRFR210

 

 
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