HSBB02P15 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HSBB02P15

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 7.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8.8 nS

Cossⓘ - Capacitancia de salida: 39 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.78 Ohm

Encapsulados: PRPAK3X3

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HSBB02P15 datasheet

 ..1. Size:835K  1
hsbb02p15.pdf pdf_icon

HSBB02P15

HSBB02P15 P-Ch 150V Fast Switching MOSFETs Description Product Summary The HSBB02P15 is the high cell density trenched V -150 V DS P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 780 m DS(ON),Max converter applications. I -2 A D The HSBB02P15 meet the RoHS and Green Product requirement. 100% EAS Guaranteed PRP

 ..2. Size:835K  huashuo
hsbb02p15.pdf pdf_icon

HSBB02P15

HSBB02P15 P-Ch 150V Fast Switching MOSFETs Description Product Summary The HSBB02P15 is the high cell density trenched V -150 V DS P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck R 780 m DS(ON),Max converter applications. I -2 A D The HSBB02P15 meet the RoHS and Green Product requirement. 100% EAS Guaranteed PRP

 9.1. Size:525K  1
hsbb0012.pdf pdf_icon

HSBB02P15

HSBB0012 N-Ch 100V Fast Switching MOSFETs Description Product Summary VDS 100 V The HSBB0012 is new generation MOSFET features low on-resistance and fast switching. RDS(ON),TYP 93 m Making it ideal for high efficiency power management applications. ID 20 A The HSBB0012 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability appro

 9.2. Size:525K  huashuo
hsbb0012.pdf pdf_icon

HSBB02P15

HSBB0012 N-Ch 100V Fast Switching MOSFETs Description Product Summary VDS 100 V The HSBB0012 is new generation MOSFET features low on-resistance and fast switching. RDS(ON),TYP 93 m Making it ideal for high efficiency power management applications. ID 20 A The HSBB0012 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability appro

Otros transistores... HSBA6032, HSBA6040, HSBA6048, HSBA6066, HSBA8024A, HSBA8048, HSBA8066, HSBB0012, 8205A, HSBB2627, HSBB3002, HSBB3004, HSBB3016, HSBB3052, HSBB3054, HSBB3056, HSBB3058