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SSS7N80A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSS7N80A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 140 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.8 Ohm

Encapsulados: TO220F

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SSS7N80A datasheet

 ..1. Size:507K  samsung
sss7n80a.pdf pdf_icon

SSS7N80A

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 1.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 1.472 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value

 9.1. Size:921K  fairchild semi
ssp7n60b sss7n60b.pdf pdf_icon

SSS7N80A

SSP7N60B/SSS7N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.0A, 600V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 38 nC) planar, DMOS technology. Low Crss ( typical 23 pF) This advanced technology has been especially tailored to Fast switchi

 9.2. Size:504K  samsung
sss7n60a.pdf pdf_icon

SSS7N80A

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 1.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 600V Lower RDS(ON) 0.977 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Valu

 9.3. Size:779K  shenzhen
sss7n60.pdf pdf_icon

SSS7N80A

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SSS7N60 600Volts 7.0Amps 600Volts 600Volts 600Volts N-CHANNEL MOSFET N-CHANNEL MOSFET N-CHANNEL MOSFET N-CHANNEL MOSFET DESCRIPTION The SSS7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche chara

Otros transistores... SSS5N90A , SSS6N55 , SSS6N60 , SSS6N70A , SSS6N80A , SSS6N90A , SSS70N10A , SSS7N60A , IRF4905 , SSS80N06A , SSU1N50 , SSU1N50A , SSU1N60A , SSU2N60A , SSU3055A , SSU3055LA , SSW1N50A .

History: SSS6N90A

 

 

 


History: SSS6N90A

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