SSS7N80A Datasheet. Specs and Replacement

Type Designator: SSS7N80A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 140 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm

Package: TO220F

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SSS7N80A datasheet

 ..1. Size:507K  samsung
 sss7n80a.pdf pdf_icon

SSS7N80A

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 1.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 1.472 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value ... See More ⇒

 9.1. Size:921K  fairchild semi
 ssp7n60b sss7n60b.pdf pdf_icon

SSS7N80A

SSP7N60B/SSS7N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.0A, 600V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 38 nC) planar, DMOS technology. Low Crss ( typical 23 pF) This advanced technology has been especially tailored to Fast switchi... See More ⇒

 9.2. Size:504K  samsung
 sss7n60a.pdf pdf_icon

SSS7N80A

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 1.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 600V Lower RDS(ON) 0.977 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Valu... See More ⇒

 9.3. Size:779K  shenzhen
 sss7n60.pdf pdf_icon

SSS7N80A

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SSS7N60 600Volts 7.0Amps 600Volts 600Volts 600Volts N-CHANNEL MOSFET N-CHANNEL MOSFET N-CHANNEL MOSFET N-CHANNEL MOSFET DESCRIPTION The SSS7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche chara... See More ⇒

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Detailed specifications: SSS5N90A, SSS6N55, SSS6N60, SSS6N70A, SSS6N80A, SSS6N90A, SSS70N10A, SSS7N60A, IRFP064N, SSS80N06A, SSU1N50, SSU1N50A, SSU1N60A, SSU2N60A, SSU3055A, SSU3055LA, SSW1N50A

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