All MOSFET. SSS7N80A Datasheet

 

SSS7N80A MOSFET. Datasheet pdf. Equivalent

Type Designator: SSS7N80A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Drain Current |Id|: 4 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 67 nC

Drain-Source Capacitance (Cd): 1500 pF

Maximum Drain-Source On-State Resistance (Rds): 1.8 Ohm

Package: TO220F

SSS7N80A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSS7N80A Datasheet (PDF)

1.1. sss7n80a.pdf Size:507K _samsung

SSS7N80A
SSS7N80A

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 1.8 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 1.472 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units V

5.1. ssp7n60b sss7n60b.pdf Size:921K _fairchild_semi

SSS7N80A
SSS7N80A

SSP7N60B/SSS7N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 7.0A, 600V, RDS(on) = 1.2Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 38 nC) planar, DMOS technology. • Low Crss ( typical 23 pF) This advanced technology has been especially tailored to • Fast switchi

5.2. sss7n60a.pdf Size:504K _samsung

SSS7N80A
SSS7N80A

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 1.2 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 0.977 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

 5.3. sss7n60b.pdf Size:201K _inchange_semiconductor

SSS7N80A
SSS7N80A

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor SSS7N60B ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·Load switch ·Power management ·ABSOLUTE MAXIMUM RATINGS(T =25℃)

5.4. sss7n60.pdf Size:779K _shenzhen-tuofeng-semi

SSS7N80A
SSS7N80A

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SSS7N60 600Volts 7.0Amps 600Volts ,600Volts 600Volts N-CHANNEL MOSFET N-CHANNEL MOSFET N-CHANNEL MOSFET N-CHANNEL MOSFET ■ DESCRIPTION The SSS7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche chara

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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