HSBE2730 Todos los transistores

 

HSBE2730 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HSBE2730
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.47 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 36 nS
   Cossⓘ - Capacitancia de salida: 83 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.017 Ohm
   Paquete / Cubierta: PRPAK3X3
     - Selección de transistores por parámetros

 

HSBE2730 Datasheet (PDF)

 ..1. Size:654K  1
 hsbe2730.pdf pdf_icon

HSBE2730

HSBE2730 N-Ch 20V Fast Switching MOSFETs Description Product Summary V 20 V DSThe HSBE2730 is the low RDSON trenched N-CH MOSFETs with robust ESD protection. This R 17 m DS(ON),maxproduct is suitable for Lithium-ion battery pack applications. I 7 A DThe HSBE2730 meet the RoHS and Green Product requirement with full function reliability approved. PRPAK3X3 NEP Pi

 ..2. Size:654K  huashuo
 hsbe2730.pdf pdf_icon

HSBE2730

HSBE2730 N-Ch 20V Fast Switching MOSFETs Description Product Summary V 20 V DSThe HSBE2730 is the low RDSON trenched N-CH MOSFETs with robust ESD protection. This R 17 m DS(ON),maxproduct is suitable for Lithium-ion battery pack applications. I 7 A DThe HSBE2730 meet the RoHS and Green Product requirement with full function reliability approved. PRPAK3X3 NEP Pi

 7.1. Size:837K  1
 hsbe2738.pdf pdf_icon

HSBE2730

HSBE2738 N-Ch 20V Fast Switching MOSFETs Description Product Summary VDS 20 V The HSBE2738 is the low RDSON trenched N-CH MOSFETs with robust ESD protection. This RDS(ON),max 9.5 m product is suitable for Lithium-ion battery pack applications. ID 12 A The HSBE2738 meet the RoHS and Green Product requirement with full function reliability approved. PRPAK3X3 NEP Pin Co

 7.2. Size:837K  huashuo
 hsbe2738.pdf pdf_icon

HSBE2730

HSBE2738 N-Ch 20V Fast Switching MOSFETs Description Product Summary VDS 20 V The HSBE2738 is the low RDSON trenched N-CH MOSFETs with robust ESD protection. This RDS(ON),max 9.5 m product is suitable for Lithium-ion battery pack applications. ID 12 A The HSBE2738 meet the RoHS and Green Product requirement with full function reliability approved. PRPAK3X3 NEP Pin Co

MOSTRAR MÁS

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: LNH4N60 | VBJ1322 | 2SK1542

 

 
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