HSBE2738 Todos los transistores

 

HSBE2738 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HSBE2738
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.47 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 85 nS
   Cossⓘ - Capacitancia de salida: 256 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0095 Ohm
   Paquete / Cubierta: PRPAK3X3

 Búsqueda de reemplazo de MOSFET HSBE2738

 

HSBE2738 Datasheet (PDF)

 ..1. Size:837K  1
hsbe2738.pdf

HSBE2738
HSBE2738

HSBE2738 N-Ch 20V Fast Switching MOSFETs Description Product Summary VDS 20 V The HSBE2738 is the low RDSON trenched N-CH MOSFETs with robust ESD protection. This RDS(ON),max 9.5 m product is suitable for Lithium-ion battery pack applications. ID 12 A The HSBE2738 meet the RoHS and Green Product requirement with full function reliability approved. PRPAK3X3 NEP Pin Co

 ..2. Size:837K  huashuo
hsbe2738.pdf

HSBE2738
HSBE2738

HSBE2738 N-Ch 20V Fast Switching MOSFETs Description Product Summary VDS 20 V The HSBE2738 is the low RDSON trenched N-CH MOSFETs with robust ESD protection. This RDS(ON),max 9.5 m product is suitable for Lithium-ion battery pack applications. ID 12 A The HSBE2738 meet the RoHS and Green Product requirement with full function reliability approved. PRPAK3X3 NEP Pin Co

 7.1. Size:654K  1
hsbe2730.pdf

HSBE2738
HSBE2738

HSBE2730 N-Ch 20V Fast Switching MOSFETs Description Product Summary V 20 V DSThe HSBE2730 is the low RDSON trenched N-CH MOSFETs with robust ESD protection. This R 17 m DS(ON),maxproduct is suitable for Lithium-ion battery pack applications. I 7 A DThe HSBE2730 meet the RoHS and Green Product requirement with full function reliability approved. PRPAK3X3 NEP Pi

 7.2. Size:654K  huashuo
hsbe2730.pdf

HSBE2738
HSBE2738

HSBE2730 N-Ch 20V Fast Switching MOSFETs Description Product Summary V 20 V DSThe HSBE2730 is the low RDSON trenched N-CH MOSFETs with robust ESD protection. This R 17 m DS(ON),maxproduct is suitable for Lithium-ion battery pack applications. I 7 A DThe HSBE2730 meet the RoHS and Green Product requirement with full function reliability approved. PRPAK3X3 NEP Pi

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top

 


HSBE2738
  HSBE2738
  HSBE2738
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918

 

 

 
Back to Top