HSBE2738 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HSBE2738

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.47 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 12 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 85 nS

Cossⓘ - Capacitancia de salida: 256 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0095 Ohm

Encapsulados: PRPAK3X3

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HSBE2738 datasheet

 ..1. Size:837K  1
 hsbe2738.pdf pdf_icon

HSBE2738

HSBE2738 N-Ch 20V Fast Switching MOSFETs Description Product Summary VDS 20 V The HSBE2738 is the low RDSON trenched N- CH MOSFETs with robust ESD protection. This RDS(ON),max 9.5 m product is suitable for Lithium-ion battery pack applications. ID 12 A The HSBE2738 meet the RoHS and Green Product requirement with full function reliability approved. PRPAK3X3 NEP Pin Co

 ..2. Size:837K  huashuo
 hsbe2738.pdf pdf_icon

HSBE2738

HSBE2738 N-Ch 20V Fast Switching MOSFETs Description Product Summary VDS 20 V The HSBE2738 is the low RDSON trenched N- CH MOSFETs with robust ESD protection. This RDS(ON),max 9.5 m product is suitable for Lithium-ion battery pack applications. ID 12 A The HSBE2738 meet the RoHS and Green Product requirement with full function reliability approved. PRPAK3X3 NEP Pin Co

 7.1. Size:654K  1
 hsbe2730.pdf pdf_icon

HSBE2738

HSBE2730 N-Ch 20V Fast Switching MOSFETs Description Product Summary V 20 V DS The HSBE2730 is the low RDSON trenched N- CH MOSFETs with robust ESD protection. This R 17 m DS(ON),max product is suitable for Lithium-ion battery pack applications. I 7 A D The HSBE2730 meet the RoHS and Green Product requirement with full function reliability approved. PRPAK3X3 NEP Pi

 7.2. Size:654K  huashuo
 hsbe2730.pdf pdf_icon

HSBE2738

HSBE2730 N-Ch 20V Fast Switching MOSFETs Description Product Summary V 20 V DS The HSBE2730 is the low RDSON trenched N- CH MOSFETs with robust ESD protection. This R 17 m DS(ON),max product is suitable for Lithium-ion battery pack applications. I 7 A D The HSBE2730 meet the RoHS and Green Product requirement with full function reliability approved. PRPAK3X3 NEP Pi

MOSTRAR MÁS

Otros transistores... HSBB4052, HSBB4062, HSBB4115, HSBB6056, HSBB6066, HSBB6115, HSBB8008, HSBE2730, IRFB3607, HSBF3202, HSBG2024, HSBG2103, HSCA2030, HSCB1216, HSCB2012, HSCB2016, HSCB20D03