HSCB2016 Todos los transistores

 

HSCB2016 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HSCB2016
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 18 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 16 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 230 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
   Paquete / Cubierta: DFN2X2-6L
     - Selección de transistores por parámetros

 

HSCB2016 Datasheet (PDF)

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HSCB2016

HSCB2016 N-Ch 20V Fast Switching MOSFETs Description Product Summary The HSCB2016 is the high cell density trenched N-V 20 V DSch MOSFETs, which provides excellent RDSON R 9 m DS(ON),typand efficiency for most of the small power switching and load switch applications. I 16 A DThe HSCB2016 meet the RoHS and Green Product requirement with full function reliability

 7.1. Size:1246K  huashuo
hscb2012.pdf pdf_icon

HSCB2016

HSCB2012 N-Ch 20V Fast Switching MOSFETs Description Product Summary The HSCB2012 is the high cell density trenched N-VDS 20 V ch MOSFETs, which provides excellent RDSON RDS(ON),typ 12 m and efficiency for most of the small power switching and load switch applications. ID 12 A The HSCB2012 meet the RoHS and Green Product requirement with full function reliability appro

 8.1. Size:830K  huashuo
hscb20d03.pdf pdf_icon

HSCB2016

HSCB20D03 20V Dual P-CH Fast Switching MOSFETs Product Summary Description The HSCB20D03 is the high cell density trenched V -20 V DSP-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching R 90 m DS(ON),typand load switch applications. I The HSCB20D03 meets the RoHS and Green D -3 A Product requirement with full function re

 9.1. Size:1125K  huashuo
hscb2307.pdf pdf_icon

HSCB2016

HSCB2307 P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSCB2307 is the high cell density trenched P-VDS -20 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),typ 15 m converter applications. ID -8 A The HSCB2307 meet the RoHS and Green Product requirement with full function reliability approved.

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: IMW65R027M1H

 

 
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