HSCB2016 datasheet, подбор замены

 ..1. Size:1039K  huashuo
 hscb2016.pdf 

HSCB2016 N-Ch 20V Fast Switching MOSFETs Description Product Summary The HSCB2016 is the high cell density trenched N- V 20 V DS ch MOSFETs, which provides excellent RDSON R 9 m DS(ON),typ and efficiency for most of the small power switching and load switch applications. I 16 A D The HSCB2016 meet the RoHS and Green Product requirement with full function reliability

 7.1. Size:1246K  huashuo
 hscb2012.pdf 

HSCB2012 N-Ch 20V Fast Switching MOSFETs Description Product Summary The HSCB2012 is the high cell density trenched N- VDS 20 V ch MOSFETs, which provides excellent RDSON RDS(ON),typ 12 m and efficiency for most of the small power switching and load switch applications. ID 12 A The HSCB2012 meet the RoHS and Green Product requirement with full function reliability appro

 8.1. Size:830K  huashuo
 hscb20d03.pdf 

HSCB20D03 20V Dual P-CH Fast Switching MOSFETs Product Summary Description The HSCB20D03 is the high cell density trenched V -20 V DS P-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching R 90 m DS(ON),typ and load switch applications. I The HSCB20D03 meets the RoHS and Green D -3 A Product requirement with full function re

 9.1. Size:1125K  huashuo
 hscb2307.pdf 

HSCB2307 P-Ch 20V Fast Switching MOSFETs Description Product Summary The HSCB2307 is the high cell density trenched P- VDS -20 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),typ 15 m converter applications. ID -8 A The HSCB2307 meet the RoHS and Green Product requirement with full function reliability approved.