HSCC8233 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HSCC8233

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.56 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 11 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 41 nS

Cossⓘ - Capacitancia de salida: 170 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0072 Ohm

Encapsulados: DFN2X3

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HSCC8233 datasheet

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 hscc8233.pdf pdf_icon

HSCC8233

HSCC8233 Dual N-Ch Fast Switching MOSFETs Product Summary General Description VDS 20 V The HSCC8233 is the low RDSON trenched N- CH MOSFETs with robust ESD protection. This RDS(ON),max 7.2 m product is suitable for Lithium-ion battery pack applications. ID 11 A The HSCC8233 meet the RoHS and Green Product requirement with full function reliability approved. D

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 hscc8211.pdf pdf_icon

HSCC8233

HSCC8211 1 Dual N-Ch Fast Switching MOSFETs General Description Product Summary The HSCC8211 is the low RDSON trenched N- VDS 20 V CH MOSFETs with robust ESD protection. This RDS(ON),max 13 m product is suitable for Lithium-ion battery pack applications. ID 8 A The HSCC8211 meet the RoHS and Green Product requirement with full function reliability approved. Low d

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 hscc8204.pdf pdf_icon

HSCC8233

HSCC8204 Dual N-Ch Fast Switching MOSFETs Product Summary General Description V 20 V DS The HSCC8204 is the low RDSON trenched N- CH MOSFETs with robust ESD protection. This R 9 m DS(ON),max product is suitable for Lithium-ion battery pack applications. I 9.5 A D The HSCC8204 meet the RoHS and Green Product requirement with full function reliability approved

Otros transistores... HSCB2012, HSCB2016, HSCB20D03, HSCB2307, HSCB3010, HSCC2734, HSCC8204, HSCC8211, 2SK3568, HSCE2530, HSCE2631, HSCE6032, HSCS2050, HSCS2052, HSD6004, HSD6016, HSF10N65