HSCC8233 Datasheet and Replacement
Type Designator: HSCC8233
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 22 nC
tr ⓘ - Rise Time: 41 nS
Cossⓘ - Output Capacitance: 170 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0072 Ohm
Package: DFN2X3
HSCC8233 substitution
HSCC8233 Datasheet (PDF)
hscc8233.pdf

HSCC8233 Dual N-Ch Fast Switching MOSFETs Product Summary General Description VDS 20 V The HSCC8233 is the low RDSON trenched N- CH MOSFETs with robust ESD protection. This RDS(ON),max 7.2 m product is suitable for Lithium-ion battery pack applications. ID 11 A The HSCC8233 meet the RoHS and Green Product requirement with full function reliability approved. D
hscc8211.pdf

HSCC82111 Dual N-Ch Fast Switching MOSFETs General Description Product Summary The HSCC8211 is the low RDSON trenched N-VDS 20 V CH MOSFETs with robust ESD protection. This RDS(ON),max 13 m product is suitable for Lithium-ion battery pack applications. ID 8 A The HSCC8211 meet the RoHS and Green Product requirement with full function reliability approved. Low d
hscc8204.pdf

HSCC8204 Dual N-Ch Fast Switching MOSFETs Product Summary General Description V 20 V DS The HSCC8204 is the low RDSON trenched N- CH MOSFETs with robust ESD protection. This R 9 m DS(ON),max product is suitable for Lithium-ion battery pack applications. I 9.5 A D The HSCC8204 meet the RoHS and Green Product requirement with full function reliability approved
Datasheet: HSCB2012 , HSCB2016 , HSCB20D03 , HSCB2307 , HSCB3010 , HSCC2734 , HSCC8204 , HSCC8211 , 5N65 , HSCE2530 , HSCE2631 , HSCE6032 , HSCS2050 , HSCS2052 , HSD6004 , HSD6016 , HSF10N65 .
Keywords - HSCC8233 MOSFET datasheet
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