HSCC8233 Datasheet. Specs and Replacement

Type Designator: HSCC8233  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 41 nS

Cossⓘ - Output Capacitance: 170 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0072 Ohm

Package: DFN2X3

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HSCC8233 datasheet

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 hscc8233.pdf pdf_icon

HSCC8233

HSCC8233 Dual N-Ch Fast Switching MOSFETs Product Summary General Description VDS 20 V The HSCC8233 is the low RDSON trenched N- CH MOSFETs with robust ESD protection. This RDS(ON),max 7.2 m product is suitable for Lithium-ion battery pack applications. ID 11 A The HSCC8233 meet the RoHS and Green Product requirement with full function reliability approved. D... See More ⇒

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 hscc8211.pdf pdf_icon

HSCC8233

HSCC8211 1 Dual N-Ch Fast Switching MOSFETs General Description Product Summary The HSCC8211 is the low RDSON trenched N- VDS 20 V CH MOSFETs with robust ESD protection. This RDS(ON),max 13 m product is suitable for Lithium-ion battery pack applications. ID 8 A The HSCC8211 meet the RoHS and Green Product requirement with full function reliability approved. Low d... See More ⇒

 8.2. Size:678K  huashuo
 hscc8204.pdf pdf_icon

HSCC8233

HSCC8204 Dual N-Ch Fast Switching MOSFETs Product Summary General Description V 20 V DS The HSCC8204 is the low RDSON trenched N- CH MOSFETs with robust ESD protection. This R 9 m DS(ON),max product is suitable for Lithium-ion battery pack applications. I 9.5 A D The HSCC8204 meet the RoHS and Green Product requirement with full function reliability approved... See More ⇒

Detailed specifications: HSCB2012, HSCB2016, HSCB20D03, HSCB2307, HSCB3010, HSCC2734, HSCC8204, HSCC8211, IRF1407, HSCE2530, HSCE2631, HSCE6032, HSCS2050, HSCS2052, HSD6004, HSD6016, HSF10N65

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