HSM0026 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HSM0026

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 7.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 29 nS

Cossⓘ - Capacitancia de salida: 245 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm

Encapsulados: SOP8

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HSM0026 datasheet

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 hsm0026.pdf pdf_icon

HSM0026

HSM0026 N-Ch 100V Fast Switching MOSFETs Description Product Summary The HSM0026 is the high cell density trenched N- VDS 100 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 20 m gate charge for most of the synchronous buck converter applications. ID 7.5 A The HSM0026 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabil

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 hsm0094.pdf pdf_icon

HSM0026

HSM0094 N-Ch 100V Fast Switching MOSFETs Description Product Summary VDS 100 V The HSM0094 is the high cell density trenched N- ch MOSFETs, which provide excellent RDSON and RDS(ON),max 12 m gate charge for most of the Synchronous Rectification for AC/DC Quick Charger. ID 11.5 A 100% EAS Guaranteed Low RDS(ON) Low Gate Charge SOP8 Pin Configuration R

 9.2. Size:2275K  huashuo
 hsm0048.pdf pdf_icon

HSM0026

HSM0048 N-Ch 100V Fast Switching MOSFETs Product Summary Description VDS 100 V The HSM0048 is the high cell density trenched N- ch MOSFETs, which provide excellent RDSON and RDS(ON),max 8 m gate charge for most of the Synchronous ID 13.5 A Rectification for AC/DC Quick Charger. l 100% EAS Guaranteed SOP8 Pin Configuration l Low RDS(ON) l Low Gate Charge l RoHs an

Otros transistores... HSH90P06, HSK0008, HSK4N10, HSL0004, HSL0107, HSL03N20, HSL6008, HSL6107, K2611, HSM0048, HSM0094, HSM0204, HSM0228, HSM1562, HSM1564, HSM1641, HSM20N02