HSM3002 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HSM3002
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 40 nS
Cossⓘ - Capacitancia de salida: 77 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
Encapsulados: SOP8
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HSM3002 datasheet
hsm3002.pdf
HSM3002 N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSM3002 is the high cell density trenched VDS 30 V N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the RDS(ON),max 18 m synchronous buck converter applications. ID 7 A The HSM3002 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabili
hsm3006.pdf
HSM3006 N-Ch 30V Fast Switching MOSFETs Description Product Summary VDS 30 V The HSM3006 is the high cell density trenched N- ch MOSFETs, which provide excellent RDSON RDS(ON),max 6 m and gate charge for most of the synchronous buck converter applications. ID 13 A The HSM3006 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabili
hsm3056.pdf
HSM3056 N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSM3056 is the high cell density trenched N- VDS 30 V ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 3.2 m gate charge for most of the synchronous buck converter applications. ID 20 A The HSM3056 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliab
Otros transistores... HSM1562, HSM1564, HSM1641, HSM20N02, HSM2202, HSM24P03, HSM2627, HSM2903, IRF840, HSM3006, HSM3056, HSM3107, HSM3115, HSM3202, HSM3206, HSM3214, HSM3303
History: HSM3056 | HSP0018A
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