HSM3002 MOSFET. Datasheet pdf. Equivalent
Type Designator: HSM3002
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 6 nC
trⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 77 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: SOP8
HSM3002 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HSM3002 Datasheet (PDF)
hsm3002.pdf
HSM3002 N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSM3002 is the high cell density trenched VDS 30 V N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the RDS(ON),max 18 m synchronous buck converter applications. ID 7 A The HSM3002 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabili
hsm3006.pdf
HSM3006 N-Ch 30V Fast Switching MOSFETs Description Product Summary VDS 30 V The HSM3006 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON RDS(ON),max 6 m and gate charge for most of the synchronous buck converter applications. ID 13 A The HSM3006 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabili
hsm3056.pdf
HSM3056 N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSM3056 is the high cell density trenched N-VDS 30 V ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 3.2 m gate charge for most of the synchronous buck converter applications. ID 20 A The HSM3056 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliab
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