HSM3214 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HSM3214

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8.2 nS

Cossⓘ - Capacitancia de salida: 131 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm

Encapsulados: SOP8

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HSM3214 datasheet

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 hsm3214.pdf pdf_icon

HSM3214

HSM3214 Dual N-Ch 30V Fast Switching MOSFETs Description Product Summary VDS 30 V The HSM3214 is the high cell density trenched N- ch MOSFETs, which provide excellent RDSON and RDS(ON),max 12 m gate charge for most of the synchronous buck converter applications. ID 10 A The HSM3214 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function rel

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 hsm3206.pdf pdf_icon

HSM3214

HSM3206 Dual N-Ch 30V Fast Switching MOSFETs Description Product Summary VDS 30 V The HSM3206 is the high cell density trenched N- ch MOSFETs, which provide excellent RDSON and RDS(ON),max 6 m gate charge for most of the synchronous buck converter applications. ID 13 A The HSM3206 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliab

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 hsm3202.pdf pdf_icon

HSM3214

HSM3202 Dual N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSM3202 is the high cell density trenched VDS 30 V N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the RDS(ON),max 18 m synchronous buck converter applications. ID 7.8 A The HSM3202 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli

Otros transistores... HSM2903, HSM3002, HSM3006, HSM3056, HSM3107, HSM3115, HSM3202, HSM3206, IRF640, HSM3303, HSM3305, HSM3903, HSM4002, HSM4004, HSM4006, HSM4052, HSM4062