HSM3214
MOSFET. Datasheet pdf. Equivalent
Type Designator: HSM3214
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 10
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 9.63
nC
trⓘ - Rise Time: 8.2
nS
Cossⓘ -
Output Capacitance: 131
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012
Ohm
Package:
SOP8
HSM3214
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HSM3214
Datasheet (PDF)
..1. Size:427K huashuo
hsm3214.pdf 
HSM3214 Dual N-Ch 30V Fast Switching MOSFETs Description Product Summary VDS 30 V The HSM3214 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 12 m gate charge for most of the synchronous buck converter applications. ID 10 A The HSM3214 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function rel
9.1. Size:2068K huashuo
hsm3206.pdf
HSM3206 Dual N-Ch 30V Fast Switching MOSFETs Description Product Summary VDS 30 V The HSM3206 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 6 m gate charge for most of the synchronous buck converter applications. ID 13 A The HSM3206 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliab
9.2. Size:453K huashuo
hsm3202.pdf
HSM3202 Dual N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSM3202 is the high cell density trenched VDS 30 V N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the RDS(ON),max 18 m synchronous buck converter applications. ID 7.8 A The HSM3202 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli
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