HSM3214 Specs and Replacement
Type Designator: HSM3214
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8.2 nS
Cossⓘ - Output Capacitance: 131 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: SOP8
HSM3214 substitution
- MOSFET ⓘ Cross-Reference Search
HSM3214 datasheet
hsm3214.pdf
HSM3214 Dual N-Ch 30V Fast Switching MOSFETs Description Product Summary VDS 30 V The HSM3214 is the high cell density trenched N- ch MOSFETs, which provide excellent RDSON and RDS(ON),max 12 m gate charge for most of the synchronous buck converter applications. ID 10 A The HSM3214 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function rel... See More ⇒
hsm3206.pdf
HSM3206 Dual N-Ch 30V Fast Switching MOSFETs Description Product Summary VDS 30 V The HSM3206 is the high cell density trenched N- ch MOSFETs, which provide excellent RDSON and RDS(ON),max 6 m gate charge for most of the synchronous buck converter applications. ID 13 A The HSM3206 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliab... See More ⇒
hsm3202.pdf
HSM3202 Dual N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSM3202 is the high cell density trenched VDS 30 V N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the RDS(ON),max 18 m synchronous buck converter applications. ID 7.8 A The HSM3202 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli... See More ⇒
Detailed specifications: HSM2903, HSM3002, HSM3006, HSM3056, HSM3107, HSM3115, HSM3202, HSM3206, IRF640, HSM3303, HSM3305, HSM3903, HSM4002, HSM4004, HSM4006, HSM4052, HSM4062
Keywords - HSM3214 MOSFET specs
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