HSP6040 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HSP6040
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 166 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 140 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 8.8 nS
   Cossⓘ - Capacitancia de salida: 325 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0052 Ohm
   Paquete / Cubierta: TO220

Búsqueda de reemplazo de MOSFET HSP6040

HSP6040 Datasheet (PDF)

..1. Size:572K huashuo
hsp6040.pdf

HSP6040 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSP6040 is the high cell density trenched N- VDS 60 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 5.2 m gate charge for most of the synchronous buck converter applications. ID 140 A The HSP6040 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabi

8.1. Size:819K huashuo
hsp6048.pdf

HSP6048 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSP6048 is the high cell density trenched N-VDS 60 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),TYP 3 m converter applications. ID 150 A The HSP6048 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability

9.1. Size:742K huashuo
hsp6032a.pdf

HSP6032A N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSP6032A is the high cell density trenched N-VDS 60 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),typ 7.1 m converter applications. ID 75 A The HSP6032A meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliab

9.2. Size:501K huashuo
hsp6016.pdf

HSP6016 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSP6016 is the high cell density trenched N-VDS 60 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous RDS(ON),max 12 m buck converter applications. ID 60 A The HSP6016 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabi

9.3. Size:551K huashuo
hsp6024a.pdf

HSP6024A N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSP6024A is the high cell density trenched VDS 60 V N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the RDS(ON),max 4.8 m synchronous buck converter applications. ID 200 A The HSP6024A meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function relia

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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