SSW4N80A Todos los transistores

 ..1. Size:184K  1
 ssi4n80a ssw4n80a.pdf

 ..2. Size:507K  samsung
 ssw4n80a.pdf

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 4.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 800V 2 Low RDS(ON) 3.400 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Charact

 0.1. Size:183K  1
 ssi4n80as ssw4n80as.pdf

 0.2. Size:881K  samsung
 ssw4n80as.pdf

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 800V 2 Low RDS(ON) 2.450 (Typ.)c 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Cha

 9.1. Size:181K  1
 ssi4n90as ssw4n90as.pdf

 9.2. Size:181K  1
 ssi4n90a ssw4n90a.pdf

 9.3. Size:217K  1
 ssi4n60a ssw4n60a.pdf

 9.4. Size:644K  fairchild semi
 ssi4n60b ssi4n60b ssw4n60b.pdf

November 2001 SSW4N60B / SSI4N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.0A, 600V, RDS(on) = 2.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 22 nC) planar, DMOS technology. Low Crss ( typical 14 pF) This advanced technology has been especially tailored to

 9.5. Size:503K  samsung
 ssw4n60a.pdf

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 2.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 600V 2 Lower RDS(ON) 2.037 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Chara