HSU0018A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HSU0018A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 90 W
   Voltaje máximo drenador - fuente |Vds|: 100 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 45 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
   Carga de la puerta (Qg): 27.6 nC
   Tiempo de subida (tr): 17.2 nS
   Conductancia de drenaje-sustrato (Cd): 268 pF
   Resistencia entre drenaje y fuente RDS(on): 0.022 Ohm
   Paquete / Cubierta: TO252

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HSU0018A Datasheet (PDF)

..1. Size:570K huashuo
hsu0018a.pdf

HSU0018A Description Product Summary The HSU0018A is the high cell density trenched VDS 100 V N-ch MOSFETs, which provide excellent RDSON RDS(ON),max 22 m and gate charge for most of the synchronous buck converter applications. ID 45 A The HSU0018A meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. TO252 Pin Con

9.1. Size:704K huashuo
hsu0026.pdf

HSU0026 N-Ch 100V Fast Switching MOSFETs Description Product Summary The HSU0026 is the high cell density trenched N- VDS 100 V ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 16 m gate charge for most of the synchronous buck converter applications. ID 40 A The HSU0026 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabili

9.2. Size:610K huashuo
hsu0048.pdf

HSU0048 N-Ch 100V Fast Switching MOSFETs Product Summary 100% EAS Guaranteed Low RDS(ON) VDS 100 V Low Gate Charge RoHs and Halogen-Free Compliant RDS(ON),TYP 6.6 m ID 73 A Description TO252 Pin Configuration The HSU0048 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the Synchronous Rec

9.3. Size:536K huashuo
hsu0004.pdf

HSU0004 N-Ch 100V Fast Switching MOSFETs Description Product Summary VDS 100 V The HSU0004 is the highest performance trench N-ch MOSFETs with extreme high cell density, RDS(ON),max 112 m which provide excellent RDSON and gate charge for most of the synchronous buck converter ID 12 A applications . The HSU0004 meet the RoHS and Green Product requirement, 100% EAS guara

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