HSU0018A Specs and Replacement

Type Designator: HSU0018A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 90 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 45 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17.2 nS

Cossⓘ - Output Capacitance: 268 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: TO252

HSU0018A substitution

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HSU0018A datasheet

 ..1. Size:570K  huashuo
 hsu0018a.pdf pdf_icon

HSU0018A

HSU0018A Description Product Summary The HSU0018A is the high cell density trenched VDS 100 V N-ch MOSFETs, which provide excellent RDSON RDS(ON),max 22 m and gate charge for most of the synchronous buck converter applications. ID 45 A The HSU0018A meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. TO252 Pin Con... See More ⇒

 9.1. Size:704K  huashuo
 hsu0026.pdf pdf_icon

HSU0018A

HSU0026 N-Ch 100V Fast Switching MOSFETs Description Product Summary The HSU0026 is the high cell density trenched N- VDS 100 V ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 16 m gate charge for most of the synchronous buck converter applications. ID 40 A The HSU0026 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabili... See More ⇒

 9.2. Size:610K  huashuo
 hsu0048.pdf pdf_icon

HSU0018A

HSU0048 N-Ch 100V Fast Switching MOSFETs Product Summary 100% EAS Guaranteed Low R DS(ON) VDS 100 V Low Gate Charge RoHs and Halogen-Free Compliant RDS(ON),TYP 6.6 m ID 73 A Description TO252 Pin Configuration The HSU0048 is the high cell density trenched N- ch MOSFETs, which provide excellent RDSON and gate charge for most of the Synchronous Rec... See More ⇒

 9.3. Size:536K  huashuo
 hsu0004.pdf pdf_icon

HSU0018A

HSU0004 N-Ch 100V Fast Switching MOSFETs Description Product Summary VDS 100 V The HSU0004 is the highest performance trench N-ch MOSFETs with extreme high cell density, RDS(ON),max 112 m which provide excellent RDSON and gate charge for most of the synchronous buck converter ID 12 A applications . The HSU0004 meet the RoHS and Green Product requirement, 100% EAS guara... See More ⇒

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Detailed specifications: HSSC3139, HSSK6303, HSSK8811, HSSN3134, HSSN3139, HSST3134, HSST3139, HSU0004, IRF540, HSU0026, HSU0048, HSU0115, HSU0139, HSU100P03, HSU1241, HSU12N10, HSU150N03

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