HSU0026 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HSU0026
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 62.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 29 nS
   Cossⓘ - Capacitancia de salida: 245 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm
   Paquete / Cubierta: TO252

Búsqueda de reemplazo de MOSFET HSU0026

HSU0026 Datasheet (PDF)

..1. Size:704K huashuo
hsu0026.pdf

HSU0026 N-Ch 100V Fast Switching MOSFETs Description Product Summary The HSU0026 is the high cell density trenched N- VDS 100 V ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 16 m gate charge for most of the synchronous buck converter applications. ID 40 A The HSU0026 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabili

9.1. Size:610K huashuo
hsu0048.pdf

HSU0048 N-Ch 100V Fast Switching MOSFETs Product Summary 100% EAS Guaranteed Low RDS(ON) VDS 100 V Low Gate Charge RoHs and Halogen-Free Compliant RDS(ON),TYP 6.6 m ID 73 A Description TO252 Pin Configuration The HSU0048 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the Synchronous Rec

9.2. Size:570K huashuo
hsu0018a.pdf

HSU0018A Description Product Summary The HSU0018A is the high cell density trenched VDS 100 V N-ch MOSFETs, which provide excellent RDSON RDS(ON),max 22 m and gate charge for most of the synchronous buck converter applications. ID 45 A The HSU0018A meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. TO252 Pin Con

9.3. Size:536K huashuo
hsu0004.pdf

HSU0004 N-Ch 100V Fast Switching MOSFETs Description Product Summary VDS 100 V The HSU0004 is the highest performance trench N-ch MOSFETs with extreme high cell density, RDS(ON),max 112 m which provide excellent RDSON and gate charge for most of the synchronous buck converter ID 12 A applications . The HSU0004 meet the RoHS and Green Product requirement, 100% EAS guara

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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