HSU3018B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HSU3018B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 110 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 6.3 nS
   Cossⓘ - Capacitancia de salida: 340 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0024 Ohm
   Paquete / Cubierta: TO252

Búsqueda de reemplazo de MOSFET HSU3018B

HSU3018B Datasheet (PDF)

..1. Size:695K huashuo
hsu3018b.pdf

HSU3018B N-Ch 30V Fast Switching MOSFETs Product Summary Description The HSU3018B is the high cell density trenched VDS 30 V N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous RDS(ON),max 2.4 m buck converter applications. ID 110 A The HSU3018B meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function rel

8.1. Size:2270K huashuo
hsu3016.pdf

HSU3016 N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSU3016 is the high cell density trenched N-VDS 30 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 4 m gate charge for most of the synchronous buck converter applications. ID 96 A The HSU3016 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability

8.2. Size:2272K huashuo
hsu3014.pdf

HSU3014 N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSU3014 is the high cell density trenched N-VDS 30 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 12 m converter applications. ID 43 A The HSU3014 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabilit

9.1. Size:2447K huashuo
hsu3031.pdf

HSU3031 P-Ch 30V Fast Switching MOSFETs Product Summary Description VDS -30 V The HSU3031 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 7.2 m gate charge for most of the synchronous buck converter applications. ID -70 A The HSU3031 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli

9.2. Size:2281K huashuo
hsu3006.pdf

HSU3006 N-Ch 30V Fast Switching MOSFETs Description Product Summary VDS 30 V The HSU3006 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 5.5 m gate charge for most of the synchronous buck converter applications. ID 80 A The HSU3006 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabili

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