Справочник MOSFET. HSU3018B

 

HSU3018B MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HSU3018B
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 60 W
   Предельно допустимое напряжение сток-исток |Uds|: 30 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 2.5 V
   Максимально допустимый постоянный ток стока |Id|: 110 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 56.9 nC
   Время нарастания (tr): 6.3 ns
   Выходная емкость (Cd): 340 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0024 Ohm
   Тип корпуса: TO252

 Аналог (замена) для HSU3018B

 

 

HSU3018B Datasheet (PDF)

 ..1. Size:695K  huashuo
hsu3018b.pdf

HSU3018B
HSU3018B

HSU3018B N-Ch 30V Fast Switching MOSFETs Product Summary Description The HSU3018B is the high cell density trenched VDS 30 V N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous RDS(ON),max 2.4 m buck converter applications. ID 110 A The HSU3018B meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function rel

 8.1. Size:2270K  huashuo
hsu3016.pdf

HSU3018B
HSU3018B

HSU3016 N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSU3016 is the high cell density trenched N-VDS 30 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 4 m gate charge for most of the synchronous buck converter applications. ID 96 A The HSU3016 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability

 8.2. Size:2272K  huashuo
hsu3014.pdf

HSU3018B
HSU3018B

HSU3014 N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSU3014 is the high cell density trenched N-VDS 30 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 12 m converter applications. ID 43 A The HSU3014 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabilit

 9.1. Size:2447K  huashuo
hsu3031.pdf

HSU3018B
HSU3018B

HSU3031 P-Ch 30V Fast Switching MOSFETs Product Summary Description VDS -30 V The HSU3031 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 7.2 m gate charge for most of the synchronous buck converter applications. ID -70 A The HSU3031 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli

 9.2. Size:2281K  huashuo
hsu3006.pdf

HSU3018B
HSU3018B

HSU3006 N-Ch 30V Fast Switching MOSFETs Description Product Summary VDS 30 V The HSU3006 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 5.5 m gate charge for most of the synchronous buck converter applications. ID 80 A The HSU3006 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabili

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