HSU3031 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HSU3031

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 90 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 70 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 255 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0072 Ohm

Encapsulados: TO252

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HSU3031 datasheet

 ..1. Size:2447K  huashuo
 hsu3031.pdf pdf_icon

HSU3031

HSU3031 P-Ch 30V Fast Switching MOSFETs Product Summary Description VDS -30 V The HSU3031 is the high cell density trenched P- ch MOSFETs, which provide excellent RDSON and RDS(ON),max 7.2 m gate charge for most of the synchronous buck converter applications. ID -70 A The HSU3031 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli

 9.1. Size:695K  huashuo
 hsu3018b.pdf pdf_icon

HSU3031

HSU3018B N-Ch 30V Fast Switching MOSFETs Product Summary Description The HSU3018B is the high cell density trenched VDS 30 V N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous RDS(ON),max 2.4 m buck converter applications. ID 110 A The HSU3018B meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function rel

 9.2. Size:2281K  huashuo
 hsu3006.pdf pdf_icon

HSU3031

HSU3006 N-Ch 30V Fast Switching MOSFETs Description Product Summary VDS 30 V The HSU3006 is the high cell density trenched N- ch MOSFETs, which provide excellent RDSON and RDS(ON),max 5.5 m gate charge for most of the synchronous buck converter applications. ID 80 A The HSU3006 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabili

 9.3. Size:2270K  huashuo
 hsu3016.pdf pdf_icon

HSU3031

HSU3016 N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSU3016 is the high cell density trenched N- VDS 30 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 4 m gate charge for most of the synchronous buck converter applications. ID 96 A The HSU3016 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability

MOSTRAR MÁS

Otros transistores... HSU150N03, HSU16N25, HSU18N20, HSU20N15A, HSU3006, HSU3014, HSU3016, HSU3018B, 2N7000, HSU3103, HSU3903, HSU4004, HSU4006, HSU4016, HSU4094, HSU4103, HSU4113