Справочник MOSFET. HSU3031

 

HSU3031 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: HSU3031
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 90 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 70 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 40 ns
   Cossⓘ - Выходная емкость: 255 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0072 Ohm
   Тип корпуса: TO252
     - подбор MOSFET транзистора по параметрам

 

HSU3031 Datasheet (PDF)

 ..1. Size:2447K  huashuo
hsu3031.pdfpdf_icon

HSU3031

HSU3031 P-Ch 30V Fast Switching MOSFETs Product Summary Description VDS -30 V The HSU3031 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 7.2 m gate charge for most of the synchronous buck converter applications. ID -70 A The HSU3031 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli

 9.1. Size:695K  huashuo
hsu3018b.pdfpdf_icon

HSU3031

HSU3018B N-Ch 30V Fast Switching MOSFETs Product Summary Description The HSU3018B is the high cell density trenched VDS 30 V N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous RDS(ON),max 2.4 m buck converter applications. ID 110 A The HSU3018B meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function rel

 9.2. Size:2281K  huashuo
hsu3006.pdfpdf_icon

HSU3031

HSU3006 N-Ch 30V Fast Switching MOSFETs Description Product Summary VDS 30 V The HSU3006 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 5.5 m gate charge for most of the synchronous buck converter applications. ID 80 A The HSU3006 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliabili

 9.3. Size:2270K  huashuo
hsu3016.pdfpdf_icon

HSU3031

HSU3016 N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSU3016 is the high cell density trenched N-VDS 30 V ch MOSFETs, which provide excellent RDSON and RDS(ON),max 4 m gate charge for most of the synchronous buck converter applications. ID 96 A The HSU3016 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability

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History: NVTFS010N10MCL | IRLR2905 | NDT6N70 | NDS336P | AP04N70BI | IPD50R280CE | GWM160-0055X1-SMD

 

 
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