RU20P7C-I Todos los transistores

 

RU20P7C-I MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RU20P7C-I

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 16 nS

Cossⓘ - Capacitancia de salida: 135 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm

Encapsulados: SOT23

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RU20P7C-I datasheet

 ..1. Size:393K  ruichips
ru20p7c-i.pdf pdf_icon

RU20P7C-I

RU20P7C-I P-Channel Advanced Power MOSFET Features Pin Description -20V/-5A, RDS (ON) =20m (Typ.)@VGS=-4.5V D RDS (ON) =30m (Typ.)@VGS=-2.5V Low On-Resistance Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G S SOT23-3 Applications Load Switch Power Management Battery Protection P-Cha

 7.1. Size:415K  ruichips
ru20p7c.pdf pdf_icon

RU20P7C-I

RU20P7C P-Channel Advanced Power MOSFET Features Pin Description -20V/-5A, RDS (ON) =20m (Typ.)@VGS=-4.5V D RDS (ON) =30m (Typ.)@VGS=-2.5V Low On-Resistance Super High Dense Cell Design Reliable and Rugged Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G S SOT23-3 D D D D D D D Applications pp Load Switch

 9.1. Size:338K  ruichips
ru20p18l.pdf pdf_icon

RU20P7C-I

RU20P18L P-Channel Advanced Power MOSFET Features Pin Description -20V/-18A, RDS (ON) =30m (Typ.)@VGS=-4.5V D RDS (ON) =45m (Typ.)@VGS=-2.5V Low On-Resistance Super High Dense Cell Design Fast Switching and Fully Avalanche Rated 100% avalanche tested 175 C Operating Temperature G Lead Free and Green Devices Available (RoHS Compliant) S TO252 D Ap

 9.2. Size:327K  ruichips
ru20p5e.pdf pdf_icon

RU20P7C-I

RU20P5E P-Channel Advanced Power MOSFET Features Pin Description -20V/-5A, RDS (ON) =50m (Typ.)@VGS=-4.5V RDS (ON) =65m (Typ.)@VGS=-3V Low On-Resistance Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) S D G SOT89 D Applications Load Switch Power Management G S P-Channel MOSFET Absolute M

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