HX2300 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HX2300
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 3.6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 50 nS
Cossⓘ - Capacitancia de salida: 120 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de MOSFET HX2300
HX2300 Datasheet (PDF)
hx2300.pdf
SOT-23-3 Plastic-Encapsulate TransistorsHX2300MOSFET(N-Channel)FEATURESTrenchFET Power MOSFETLoad Switch for Portable DevicesDC/DC ConverterMARKING:00A8CMAXIMUM RATINGS (TA=25 unless otherwise noted)Symbol Parameter Value UnitsVDS Drain-Source voltage 20 VVGS Gate-Source voltage 8 VID Drain current 3.6 APD Power Dissipation 1 WTj Junction Temperature 150 Ts
hx2300a.pdf
SOT-23 Plastic-Encapsulate TransistorsHX2300AMOSFET(N-Channel)FEATURESTrenchFET Power MOSFETLoad Switch for Portable DevicesDC/DC ConverterMARKING:00A8CMAXIMUM RATINGS (TA=25 unless otherwise noted)Symbol Parameter Value UnitsV Drain-Source voltage 20 VDSV Gate-Source voltage 8 VGSI Drain current 2.5 ADP Power Dissipation 1 WDTj Junction Temperature 150
hx2305.pdf
SOT-23-3Plastic-Encapsulate TransistorsHX2305MOSFET(P-Channel)FEATURESTrenchFET Power MOSFETMARKING: A5SHBMAXIMUM RATINGS (TA=25 unless otherwise noted)Symbol Parameter Value UnitsVDS Drain-Source voltage -20 VVGS Gate-Source voltage 12 V-3 AID Drain currentPD Power Dissipation 1 WTj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHAR
hx2302a.pdf
SOT-23 Plastic-Encapsulate TransistorsHX2302A MOSFET(N-Channel)FEATURESTrenchFET Power MOSFETMARKING:A2SHBMAXIMUM RATINGS (TA=25 unless otherwise noted)Symbol Parameter Value UnitsVDS Drain-Source voltage 20 VVGS Gate-Source voltage 12 VID Drain current 2.5 APD Power Dissipation 0.9 WTj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL C
hx2301.pdf
SOT-23 -3Plastic-Encapsulate Transistors HX2301 MOSFET(P-Channel)FEATURES TrenchFET Power MOSFET MARKING: A1SHBMAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVDS Drain-Source voltage -20 V VGS Gate-Source voltage 12 V-2.8 AID Drain current PD Power Dissipation 1 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 E
hx2301a.pdf
SOT-23 Plastic-Encapsulate TransistorsHX2301A MOSFET(P-Channel)FEATURESPWM applicationsLoad switchPower managementMARKING: A1SHBMAXIMUM RATINGS (TA=25 unless otherwise noted)Symbol Parameter Value UnitsVDS Drain-Source voltage -20 VVGS Gate-Source voltage 12 VID Drain current -2.5 APD Power Dissipation 0.9 WTj Junction Temperature 150 Tstg Storage Temperature
hx2302.pdf
SOT-23-3 Plastic-Encapsulate Transistors HX2302 MOSFET(N-Channel) FEATURES TrenchFET Power MOSFET MARKING:A2SHBMAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVDS Drain-Source voltage 20 V VGS Gate-Source voltage 8 VID Drain current 3.0 A PD Power Dissipation 1 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 EL
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Liste
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