HX2300 - описание и поиск аналогов

SOT-23-3 Plastic-Encapsulate Transistors HX2300MOSFET(N-Channel) FEATURES TrenchFET Power MOSFET Load Switch for Portable Devices DC/DC Converter MARKING 00A8C MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage 20 V VGS Gate-Source voltage 8 V ID Drain current 3.6 A PD Power Dissipation 1 W Tj Junction Temperature 150 Ts

SOT-23 Plastic-Encapsulate Transistors HX2300AMOSFET(N-Channel) FEATURES TrenchFET Power MOSFET Load Switch for Portable Devices DC/DC Converter MARKING 00A8C MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units V Drain-Source voltage 20 V DS V Gate-Source voltage 8 V GS I Drain current 2.5 A D P Power Dissipation 1 W D Tj Junction Temperature 150

SOT-23-3Plastic-Encapsulate Transistors HX2305MOSFET(P-Channel) FEATURES TrenchFET Power MOSFET MARKING A5SHB MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage -20 V VGS Gate-Source voltage 12 V -3 A ID Drain current PD Power Dissipation 1 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHAR

SOT-23 Plastic-Encapsulate Transistors HX2302A MOSFET(N-Channel) FEATURES TrenchFET Power MOSFET MARKING A2SHB MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage 20 V VGS Gate-Source voltage 12 V ID Drain current 2.5 A PD Power Dissipation 0.9 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL C

SOT-23 -3Plastic-Encapsulate Transistors HX2301 MOSFET(P-Channel) FEATURES TrenchFET Power MOSFET MARKING A1SHB MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage -20 V VGS Gate-Source voltage 12 V -2.8 A ID Drain current PD Power Dissipation 1 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 E

SOT-23 Plastic-Encapsulate Transistors HX2301A MOSFET(P-Channel) FEATURES PWM applications Load switch Power management MARKING A1SHB MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage -20 V VGS Gate-Source voltage 12 V ID Drain current -2.5 A PD Power Dissipation 0.9 W Tj Junction Temperature 150 Tstg Storage Temperature

SOT-23-3 Plastic-Encapsulate Transistors HX2302 MOSFET(N-Channel) FEATURES TrenchFET Power MOSFET MARKING A2SHB MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage 20 V VGS Gate-Source voltage 8 V ID Drain current 3.0 A PD Power Dissipation 1 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 EL