HX2300A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HX2300A
Código: 00A8C
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1 W
Voltaje máximo drenador - fuente |Vds|: 20 V
Voltaje máximo fuente - puerta |Vgs|: 8 V
Corriente continua de drenaje |Id|: 2.5 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1.2 V
Carga de la puerta (Qg): 4 nC
Tiempo de subida (tr): 50 nS
Conductancia de drenaje-sustrato (Cd): 120 pF
Resistencia entre drenaje y fuente RDS(on): 0.07 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de MOSFET HX2300A
HX2300A Datasheet (PDF)
hx2300a.pdf
SOT-23 Plastic-Encapsulate TransistorsHX2300AMOSFET(N-Channel)FEATURESTrenchFET Power MOSFETLoad Switch for Portable DevicesDC/DC ConverterMARKING:00A8CMAXIMUM RATINGS (TA=25 unless otherwise noted)Symbol Parameter Value UnitsV Drain-Source voltage 20 VDSV Gate-Source voltage 8 VGSI Drain current 2.5 ADP Power Dissipation 1 WDTj Junction Temperature 150
hx2300.pdf
SOT-23-3 Plastic-Encapsulate TransistorsHX2300MOSFET(N-Channel)FEATURESTrenchFET Power MOSFETLoad Switch for Portable DevicesDC/DC ConverterMARKING:00A8CMAXIMUM RATINGS (TA=25 unless otherwise noted)Symbol Parameter Value UnitsVDS Drain-Source voltage 20 VVGS Gate-Source voltage 8 VID Drain current 3.6 APD Power Dissipation 1 WTj Junction Temperature 150 Ts
hx2305.pdf
SOT-23-3Plastic-Encapsulate TransistorsHX2305MOSFET(P-Channel)FEATURESTrenchFET Power MOSFETMARKING: A5SHBMAXIMUM RATINGS (TA=25 unless otherwise noted)Symbol Parameter Value UnitsVDS Drain-Source voltage -20 VVGS Gate-Source voltage 12 V-3 AID Drain currentPD Power Dissipation 1 WTj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHAR
hx2302a.pdf
SOT-23 Plastic-Encapsulate TransistorsHX2302A MOSFET(N-Channel)FEATURESTrenchFET Power MOSFETMARKING:A2SHBMAXIMUM RATINGS (TA=25 unless otherwise noted)Symbol Parameter Value UnitsVDS Drain-Source voltage 20 VVGS Gate-Source voltage 12 VID Drain current 2.5 APD Power Dissipation 0.9 WTj Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL C
hx2301.pdf
SOT-23 -3Plastic-Encapsulate Transistors HX2301 MOSFET(P-Channel)FEATURES TrenchFET Power MOSFET MARKING: A1SHBMAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVDS Drain-Source voltage -20 V VGS Gate-Source voltage 12 V-2.8 AID Drain current PD Power Dissipation 1 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 E
hx2301a.pdf
SOT-23 Plastic-Encapsulate TransistorsHX2301A MOSFET(P-Channel)FEATURESPWM applicationsLoad switchPower managementMARKING: A1SHBMAXIMUM RATINGS (TA=25 unless otherwise noted)Symbol Parameter Value UnitsVDS Drain-Source voltage -20 VVGS Gate-Source voltage 12 VID Drain current -2.5 APD Power Dissipation 0.9 WTj Junction Temperature 150 Tstg Storage Temperature
hx2302.pdf
SOT-23-3 Plastic-Encapsulate Transistors HX2302 MOSFET(N-Channel) FEATURES TrenchFET Power MOSFET MARKING:A2SHBMAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVDS Drain-Source voltage 20 V VGS Gate-Source voltage 8 VID Drain current 3.0 A PD Power Dissipation 1 W Tj Junction Temperature 150 Tstg Storage Temperature -55-150 EL
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